6N90AF Todos los transistores

 ..1. Size:378K  nell
 6n90a 6n90af.pdf

RoHS 6N90 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET 6A, 900Volts DESCRIPTION D The Nell 6N90 is a three-terminal silicon device with current conduction capability of 6A, fast switching speed, low on-state resistance, breakdown voltage rating of 900V, and max. threshold voltage of 5 volts. They are designed for use in applications such as G DS G

 9.1. Size:206K  1
 ssf6n90a.pdf

 9.2. Size:946K  samsung
 ssh6n90a.pdf

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 2.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 1.829 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value

 9.3. Size:506K  samsung
 sss6n90a.pdf

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 2.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 1.829 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value

 9.4. Size:863K  samsung
 ssp6n90a.pdf

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 2.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 1.829 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value

 9.5. Size:1057K  feihonltd
 fhp6n90a fhf6n90a.pdf

N N-CHANNEL MOSFET FHP6N90A /FHF6N90A MAIN CHARACTERISTICS FEATURES ID 6A Low gate charge VDSS 900V Crss ( 11pF) Low Crss (typical 11pF ) Rdson-typ @Vgs=10V 1.5 Fast switching Qg-typ 34nC 100% 100% avalanche tested dv/dt Improv

 9.6. Size:609K  wuxi china
 cs6n90arh-g.pdf

Silicon N-Channel Power MOSFET R CS6N90 ARH-G General Description VDSS 900 V CS6N90 ARH-G, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 48 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.85 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various