6N90AF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 6N90AF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 56 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 30 nC
   trⓘ - Tiempo de subida: 90 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.3 Ohm
   Paquete / Cubierta: TO-220F

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6N90AF Datasheet (PDF)

..1. Size:378K nell
6n90a 6n90af.pdf

RoHS 6N90 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET6A, 900VoltsDESCRIPTIOND The Nell 6N90 is a three-terminal silicon devicewith current conduction capability of 6A, fast switchingspeed, low on-state resistance, breakdown voltagerating of 900V, and max. threshold voltage of 5 volts. They are designed for use in applications such as GDS G

9.1. Size:206K 1
ssf6n90a.pdf

9.2. Size:946K samsung
ssh6n90a.pdf

Advanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 2.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 1.829 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

9.3. Size:506K samsung
sss6n90a.pdf

Advanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 2.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 1.829 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

9.4. Size:863K samsung
ssp6n90a.pdf

9.5. Size:1057K feihonltd
fhp6n90a fhf6n90a.pdf

N N-CHANNEL MOSFET FHP6N90A /FHF6N90A MAIN CHARACTERISTICS FEATURES ID 6A Low gate charge VDSS 900V Crss ( 11pF) Low Crss (typical 11pF ) Rdson-typ @Vgs=10V 1.5 Fast switching Qg-typ 34nC 100% 100% avalanche tested dv/dt Improv

9.6. Size:609K wuxi china
cs6n90arh-g.pdf

Silicon N-Channel Power MOSFET R CS6N90 ARH-G General Description VDSS 900 V CS6N90 ARH-G, the silicon N-channel Enhanced ID 6 A PD(TC=25) 48 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.85 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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