6N90AF
MOSFET. Datasheet pdf. Equivalent
Type Designator: 6N90AF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 56
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 30
nC
trⓘ - Rise Time: 90
nS
Cossⓘ -
Output Capacitance: 110
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.3
Ohm
Package:
TO-220F
6N90AF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
6N90AF
Datasheet (PDF)
..1. Size:378K nell
6n90a 6n90af.pdf 
RoHS 6N90 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET6A, 900VoltsDESCRIPTIOND The Nell 6N90 is a three-terminal silicon devicewith current conduction capability of 6A, fast switchingspeed, low on-state resistance, breakdown voltagerating of 900V, and max. threshold voltage of 5 volts. They are designed for use in applications such as GDS G
9.2. Size:946K samsung
ssh6n90a.pdf
Advanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 2.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 1.829 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value
9.3. Size:506K samsung
sss6n90a.pdf
Advanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 2.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 1.829 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value
9.4. Size:863K samsung
ssp6n90a.pdf
Advanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 2.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 1.829 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value
9.5. Size:1057K feihonltd
fhp6n90a fhf6n90a.pdf
N N-CHANNEL MOSFET FHP6N90A /FHF6N90A MAIN CHARACTERISTICS FEATURES ID 6A Low gate charge VDSS 900V Crss ( 11pF) Low Crss (typical 11pF ) Rdson-typ @Vgs=10V 1.5 Fast switching Qg-typ 34nC 100% 100% avalanche tested dv/dt Improv
9.6. Size:609K wuxi china
cs6n90arh-g.pdf
Silicon N-Channel Power MOSFET R CS6N90 ARH-G General Description VDSS 900 V CS6N90 ARH-G, the silicon N-channel Enhanced ID 6 A PD(TC=25) 48 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.85 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various
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