75N10B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 75N10B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 300 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 75 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
Carga de la puerta (Qg): 74 nC
Tiempo de subida (tr): 53 nS
Conductancia de drenaje-sustrato (Cd): 890 pF
Resistencia entre drenaje y fuente RDS(on): 0.025 Ohm
Paquete / Cubierta: TO-220AB
Búsqueda de reemplazo de MOSFET 75N10B
75N10B Datasheet (PDF)
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rsd175n10.pdf
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wmk175n10lg4.pdf
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wmb175n10hg4.pdf
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wmq175n10lg4.pdf
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wmq175n10hg4.pdf
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wmo175n10hg4.pdf
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