75N10B - описание и поиск аналогов

 ..1. Size:385K  nell
 75n10a 75n10b.pdf 

RoHS 75N10 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (75A, 100Volts) DESCRIPTION D D The Nell 75N10 is a three-terminal silicon device with current conduction capability of 75A, fast switching speed, low on-state resistance, breakdown voltage rating of 100V, and max. threshold voltage of 5 volts. They are designed as an extremely efficient and G

 0.1. Size:145K  ssdi
 sff75n10b.pdf 

 9.1. Size:1354K  rohm
 rsd175n10fra.pdf 

Data Sheet AEC-Q101 Qualified 4V Drive Nch MOSFET RSD175N10 RSD175N10FRA Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 6.5 (SC-63) 5.1 2.3 0.5 Features 1) Low on-resistance. 4) 4V drive. 0.75 4) High power package. 0.65 0.9 2.3 (1) (2) (3) 2.3 0.5 1.0 Application Switching Packaging specifications Inner circuit 1

 9.2. Size:1159K  rohm
 rsd175n10.pdf 

Data Sheet 4V Drive Nch MOSFET RSD175N10 Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 6.5 (SC-63) 5.1 2.3 0.5 Features 1) Low on-resistance. 4) 4V drive. 0.75 4) High power package. 0.65 0.9 2.3 (1) (2) (3) 2.3 0.5 1.0 Application Switching Packaging specifications Inner circuit 1 Package Taping Type Code TL Bas

 9.3. Size:151K  ixys
 ixfh75n10q ixft75n10q.pdf 

Advanced Technical Information IXFH 75N10Q VDSS = 100 V HiPerFETTM IXFT 75N10Q ID25 = 75 A Power MOSFETs RDS(on) = 20 mW Q-Class t 200ns rr N-Channel Enhancement Mode Avalanche Rated, High dv/dt Low Gate Charge and Capacitances Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 100 V VDGR TJ = 25 C to 150 C; RGS = 1 M 100 V VGS Continuous

 9.4. Size:252K  ixys
 ixta75n10p ixtp75n10p ixtq75n10p.pdf 

IXTA 75N10P VDSS = 100 V PolarHTTM IXTP 75N10P ID25 = 75 A Power MOSFET IXTQ 75N10P RDS(on) 25 m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G S VDSS TJ = 25 C to 175 C 100 V (TAB) VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGS Continuous 20 V TO-220 (IXTP) VGSM Transient

 9.5. Size:579K  ixys
 ixth67n10 ixtm67n10 ixth75n10 ixtm75n10 ixtt75n10.pdf 

VDSS ID25 RDS(on) MegaMOSTMFET IXTH / IXTM 67N10 100 V 67 A 25 m IXTH / IXTM 75N10 100 V 75 A 20 m IXTT 75N10 N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25 C to 150 C 100 V VDGR TJ = 25 C to 150 C; RGS = 1 M 100 V TO-204 AE (IXTM) VGS Continuous 20 V VGSM Transient 30

 9.6. Size:139K  ixys
 ixth75n10l2 ixtt75n10l2.pdf 

Advance Technical Information LinearL2TM Power VDSS = 100V IXTH75N10L2 MOSFET w/extended ID25 = 75A IXTT75N10L2 RDS(on) 21m FBSOA D D D D O D O N-Channel Enhancement Mode RGi Guaranteed FBSOA w w G O Avalanche Rated TO-247 (IXTH) O S Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 100 V D D (Tab) S VDGR TJ = 25

 9.7. Size:94K  ixys
 ixfh67n10 ixfh75n10 ixfm67n10 ixfm75n10.pdf 

 9.8. Size:34K  microsemi
 msafx75n10a.pdf 

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 FAX (714) 966-5256 MSAFX75N10A Features 100 Volts Ultrafast body diode 75 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability 20 m Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance N-CHANNEL

 9.9. Size:82K  microsemi
 msafa75n10c.pdf 

MSAFA75N10C N-CHANNEL ENHANCEMENT MODE SANTA ANA DIVISION POWER MOSFET PRODUCT PREVIEW KEY FEATURES KEY FEATURES KEY FEATURES KEY FEATURES DESCRIPTION Ultrafast body diode New generation N-channel enhancement mode power MOSFET with Increased Unclamped rugged polysilicon gate structure and fast switching intrinsic rectifier. The Inductive Switching (UIS) very

 9.10. Size:857K  cet
 cep75n10 ceb75n10.pdf 

CEP75N10/CEB75N10 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 72A, RDS(ON) = 15m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherw

 9.11. Size:158K  ssdi
 sff75n10.pdf 

 9.12. Size:168K  ssdi
 sff75n10n sff75n10p.pdf 

 9.13. Size:1003K  belling
 blp075n10g-p blp075n10g-b.pdf 

BLP075N10G MOSFET Step-Down Converter , 1 Description BLP075N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Param

 9.14. Size:258K  feihonltd
 fhp75n100a.pdf 

 9.15. Size:216K  hy
 hy75n10t.pdf 

HY75N10T 100V / 75A 100V, RDS(ON)=13mW@VGS=10V, ID=30A N-Channel Enhancement Mode MOSFET Features TO-220AB Low On-State Resistance Excellent Gate Charge x RDS(ON) Product ( FOM ) Fully Characterized Avalanche Voltage and Current Specially Desigened for DC-DC Converter, Off-line UPS, Automotive System, Solenoid and Motor Control Drain 2 In compliance with E

 9.16. Size:784K  way-on
 wms175n10hg4.pdf 

WMS175N10HG4 100V N-Channel Enhancement Mode Power MOSFET D D Description D D WMS175N10HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state S S S resistance and yet maintain superior switching performance. This G device is well suited for high efficiency fast switching applications. SOP-8L Features

 9.17. Size:614K  way-on
 wmo175n10lg4.pdf 

WMO175N10LG4 100V N-Channel Enhancement Mode Power MOSFET Description WMO175N10LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This D S device is well suited for high efficiency fast switching applications. G TO-252 Features V = 100V, I =

 9.18. Size:620K  way-on
 wmb175n10lg4.pdf 

WMB175N10LG4 100V N-Channel Enhancement Mode Power MOSFET Description D D D DD D D D WMB175N10LG4 uses Wayon's 4th generation power trench MOSFET G technology that has been especially tailored to minimize the on-state ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50

 9.19. Size:599K  way-on
 wmk175n10hg4.pdf 

WMK175N10HG4 100V N-Channel Enhancement Mode Power MOSFET Description WMK175N10HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 100V, I =

 9.20. Size:604K  way-on
 wmk175n10lg4.pdf 

WMK175N10LG4 100V N-Channel Enhancement Mode Power MOSFET Description WMK175N10LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 100V, I =

 9.21. Size:617K  way-on
 wmb175n10hg4.pdf 

WMB175N10HG4 100V N-Channel Enhancement Mode Power MOSFET Description D D D DD D D D WMB175N10HG4 uses Wayon's 4th generation power trench MOSFET G technology that has been especially tailored to minimize the on-state ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50

 9.22. Size:600K  way-on
 wmq175n10lg4.pdf 

WMQ175N10LG4 100V N-Channel Enhancement Mode Power MOSFET D D Description D D D D D D WMQ175N10LG4 uses Wayon's 4th generation power trench S G S S MOSFET technology that has been especially tailored to minimize S S G S the on-state resistance and yet maintain superior switching PDFN3030-8L performance. This device is well suited for high efficiency fast switching

 9.23. Size:622K  way-on
 wmq175n10hg4.pdf 

WMQ175N10HG4 100V N-Channel Enhancement Mode Power MOSFET D D Description D D D D D D WMQ175N10HG4 uses Wayon's 4th generation power trench S G S S MOSFET technology that has been especially tailored to minimize S S G S the on-state resistance and yet maintain superior switching PDFN3030-8L performance. This device is well suited for high efficiency fast switching

 9.24. Size:609K  way-on
 wmo175n10hg4.pdf 

WMO175N10HG4 100V N-Channel Enhancement Mode Power MOSFET Description WMO175N10HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This S device is well suited for high efficiency fast switching applications. G TO-252 Features V = 100V, I =

 9.25. Size:770K  way-on
 wms175n10lg4.pdf 

WMS175N10LG4 100V N-Channel Enhancement Mode Power MOSFET D D Description D D WMS175N10LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state S S S resistance and yet maintain superior switching performance. This G device is well suited for high efficiency fast switching applications. SOP-8L Features

 9.26. Size:228K  inchange semiconductor
 75n10.pdf 

INCHANGE Semiconductor isc N-Channel Mosfet Transistor 75N10 FEATURES Drain Current I = 75A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching mode power supplies General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 9.27. Size:216K  inchange semiconductor
 ixta75n10p.pdf 

isc N-Channel MOSFET Transistor IXTA75N10P DESCRIPTION Drain Current I = 75A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . Designed for high current, high speed switching, switch mode power supplies (SMPS), consumer and industrial lighting, D