7N60H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 7N60H
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 140 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 170 nS
Cossⓘ - Capacitancia de salida: 180 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
Paquete / Cubierta: TO-263
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7N60H Datasheet (PDF)
7n60af 7n60h.pdf

RoHS 7N60 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(7A, 600Volts)DESCRIPTION The Nell 7N60 is a three-terminal silicon device with current conduction capability of 7A,Dfast switching speed, low on-state resistance,breakdown voltage rating of 600V ,and max. threshold voltage of 4 volts. They are designed for use in applications. suchas sw
kia7n60h.pdf

7.0A,600VN-CHANNELMOSFET7N60HKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThis Power MOSFET is produced using KIA`s advanced planar stripe DMOS technology. Thisadvanced technology has been especially tailored to minimize on-state resistance, provide superiorswitching performance, and withstand high energy pulse in the avalanche and commutation mode. Th
tma7n60h tmc7n60h tmd7n60h tmu7n60h.pdf

TMA7N60H, TMC7N60H, TMD7N60H, TMU7N60H Wuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TM
Otros transistores... 6N90A , 6N90AF , 75N08 , 75N10A , 75N10B , MSAFA75N10C , MSAFX76N07A , 7N60AF , IRFZ48N , 7N90A , 7N90AF , 8N60H , 8N80A , 8N80AF , 8N80B , MSAEX8P50A , NID9N05ACL .
History: STH140N8F7-2
History: STH140N8F7-2



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