7N60H Datasheet and Replacement
Type Designator: 7N60H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 140 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 28 nC
tr ⓘ - Rise Time: 170 nS
Cossⓘ - Output Capacitance: 180 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO-263
7N60H substitution
7N60H Datasheet (PDF)
7n60af 7n60h.pdf

RoHS 7N60 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(7A, 600Volts)DESCRIPTION The Nell 7N60 is a three-terminal silicon device with current conduction capability of 7A,Dfast switching speed, low on-state resistance,breakdown voltage rating of 600V ,and max. threshold voltage of 4 volts. They are designed for use in applications. suchas sw
kia7n60h.pdf

7.0A,600VN-CHANNELMOSFET7N60HKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThis Power MOSFET is produced using KIA`s advanced planar stripe DMOS technology. Thisadvanced technology has been especially tailored to minimize on-state resistance, provide superiorswitching performance, and withstand high energy pulse in the avalanche and commutation mode. Th
tma7n60h tmc7n60h tmd7n60h tmu7n60h.pdf

TMA7N60H, TMC7N60H, TMD7N60H, TMU7N60H Wuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TM
Datasheet: 6N90A , 6N90AF , 75N08 , 75N10A , 75N10B , MSAFA75N10C , MSAFX76N07A , 7N60AF , IRFZ48N , 7N90A , 7N90AF , 8N60H , 8N80A , 8N80AF , 8N80B , MSAEX8P50A , NID9N05ACL .
History: FCPF850N80Z
Keywords - 7N60H MOSFET datasheet
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History: FCPF850N80Z



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