AMD533CE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AMD533CE
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 36 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 4 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
   Paquete / Cubierta: TO-252AD-5

Búsqueda de reemplazo de MOSFET AMD533CE

AMD533CE Datasheet (PDF)

..1. Size:234K analog power
amd533ce.pdf

Analog Power AMD533CEP & N-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 45 @ V = 4.5V 29GS30converters and power management in portable and 35 @ V = 10V 36GS

9.1. Size:140K analog power
amd532c.pdf

Analog Power AMD532CP & N-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 95 @ V = 2.5V 20GS30converters and power management in portable and 59 @ V = 4.5V 24GS

9.2. Size:79K analog power
amd534c.pdf

Analog Power AMD534CP & N-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m) ID (A)(rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 39 @ V = 4.5V 30GS30converters and power management in portable and 29 @ V = 10V 36G

9.3. Size:140K analog power
amd530c.pdf

Analog Power AMD530CP & N-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 45 @ V = 2.5V 29GS30converters and power management in portable and 35 @ V = 4.5V 36GS

9.4. Size:183K analog power
amd534ce.pdf

Analog Power AMD534CEP & N-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 45 @ V = 4.5V 29GS30converters and power management in portable and 35 @ V = 10V 36GS

9.5. Size:141K analog power
amd531c.pdf

Analog Power AMD531CP & N-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYThese miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m()ID (A)minimal power loss and conserves energy, making 20 @ VGS = 4.5V 51this device ideal for use in power management 3016 @ V = 10V 41circuitry. Typical applications are PWMDC-DC GSconverters

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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