All MOSFET. AMD533CE Datasheet

 

AMD533CE Datasheet and Replacement


   Type Designator: AMD533CE
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.6 V
   |Id| ⓘ - Maximum Drain Current: 36 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 6 nC
   tr ⓘ - Rise Time: 4 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TO-252AD-5
 

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AMD533CE Datasheet (PDF)

 ..1. Size:234K  analog power
 amd533ce.pdf pdf_icon

AMD533CE

Analog Power AMD533CEP & N-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 45 @ V = 4.5V 29GS30converters and power management in portable and 35 @ V = 10V 36GS

 9.1. Size:140K  analog power
 amd532c.pdf pdf_icon

AMD533CE

Analog Power AMD532CP & N-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 95 @ V = 2.5V 20GS30converters and power management in portable and 59 @ V = 4.5V 24GS

 9.2. Size:79K  analog power
 amd534c.pdf pdf_icon

AMD533CE

Analog Power AMD534CP & N-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m) ID (A)(rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 39 @ V = 4.5V 30GS30converters and power management in portable and 29 @ V = 10V 36G

 9.3. Size:140K  analog power
 amd530c.pdf pdf_icon

AMD533CE

Analog Power AMD530CP & N-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 45 @ V = 2.5V 29GS30converters and power management in portable and 35 @ V = 4.5V 36GS

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Datasheet: AMCC920NE , AMCC921PE , AMCC922NE , AMCC924NE , AMD510C , AMD530C , AMD531C , AMD532C , IRF9540 , AMD534C , AMD534CE , AMD540CE , AMF920NE , AMF922NE , AMF924NE , AMR430N , AMR432N .

History: 2SK2347 | 2SK2009 | 2SK2055 | CEB02N7G | NCE6890K | KP7128B | RUH40190M

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