AMR496N Todos los transistores

 

AMR496N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AMR496N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 177 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm
   Paquete / Cubierta: DFN5X6-8L
 

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AMR496N Datasheet (PDF)

 ..1. Size:315K  analog power
 amr496n.pdf pdf_icon

AMR496N

Analog Power AMR496NN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)65 @ VGS = 10V7.2 Low thermal impedance 15075 @ VGS = 5.5V6.7 Fast switching speed Typical Applications: DFN5X6-8L PoE PSE and PD Circuits LED Inverter Circuits 48V-Input DC/DC Conversion Circuits ABSOLU

 9.1. Size:315K  analog power
 amr490n.pdf pdf_icon

AMR496N

Analog Power AMR490NN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)150 @ VGS = 10V4.8 Low thermal impedance 150170 @ VGS = 4.5V4.5 Fast switching speed Typical Applications: DFN5X6-8L PoE PSE and PD Circuits LED Inverter Circuits 48V-Input DC/DC Conversion Circuits AB

 9.2. Size:317K  analog power
 amr494n.pdf pdf_icon

AMR496N

Analog Power AMR494NN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)160 @ VGS = 10V4.6 Low thermal impedance 150180 @ VGS = 5.5V4.4 Fast switching speed Typical Applications: DFN5X6-8L PoE PSE and PD Circuits LED Inverter Circuits 48V-Input DC/DC Conversion Circuits AB

 9.3. Size:315K  analog power
 amr492n.pdf pdf_icon

AMR496N

Analog Power AMR492NN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)140 @ VGS = 10V4.9 Low thermal impedance 150160 @ VGS = 4.5V4.6 Fast switching speed Typical Applications: DFN5X6-8L PoE PSE and PD Circuits LED Inverter Circuits 48V-Input DC/DC Conversion Circuits AB

MOSTRAR MÁS

Otros transistores... AMF924NE , AMR430N , AMR432N , AMR434N , AMR460N , AMR490N , AMR492N , AMR494N , AO3400 , AMR860N , AMR930N , AMS930N , APF7619WS , APL1001J , APL501J , APL502B2G , APL502J .

History: HM830 | 2SK851 | JCS7HN60F | ZDX130N50 | NCE70T540F | NCE60P04SN | BSC011N03LSI

 

 
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