AUIRF7675M2TR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AUIRF7675M2TR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.7 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 4.4 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 13 nS
Cossⓘ - Capacitancia de salida: 190 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.056 Ohm
Paquete / Cubierta: DIRECTFET
Búsqueda de reemplazo de AUIRF7675M2TR MOSFET
Principales características: AUIRF7675M2TR
auirf7675m2tr.pdf
PD -97552 AUIRF7675M2TR AUTOMOTIVE GRADE AUIRF7675M2TR1 DirectFET Power MOSFET Advanced Process Technology V(BR)DSS Optimized for Class D Audio Amplifier Applications 150V Low Rds(on) for Improved Efficiency RDS(on) typ. 47m Low Qg for Better THD and Improved Efficiency max. 56m Low Qrr for Better THD and Lower EMI RG (typical) 1.2 Low Parasitic In
auirf7675m2tr.pdf
AUTOMOTIVE GRADE AUIRF7675M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 150V Optimized for Class D Audio Amplifier Applications Low Rds(on) for Improved Efficiency RDS(on) typ. 47m Low Qg for Better THD and Improved Efficiency max. 56m Low Qrr for Better THD and Lower EMI Rg (typical) 1.2 Low Parasiti
auirf7665s2tr.pdf
PD - 96286B AUIRF7665S2TR AUTOMOTIVE GRADE AUIRF7665S2TR1 DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 100V Optimized for Class D Audio Amplifier Applications Low Rds(on) for Improved Efficiency RDS(on) typ. 51m Low Qg for Better THD and Improved Efficiency max. 62m Low Qrr for Better THD and Lower EMI RG (typical) 3.5 Low P
auirf7647s2tr1.pdf
PD - 97537A AUIRF7647S2TR AUTOMOTIVE GRADE AUIRF7647S2TR1 DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 100V Optimized for Class D Audio Amplifier Applications Low Rds(on) for Improved Efficiency RDS(on) typ. 26m Low Qg for Better THD and Improved Efficiency max. 31m Low Qrr for Better THD and Lower EMI RG (typical) 1.6 Low Par
Otros transistores... AUIRF6218S , AUIRF7313Q , AUIRF7484Q , AUIRF7640S2TR , AUIRF7647S2TR1 , AUIRF7648M2TR1 , AUIRF7665S2TR , AUIRF7669L2TR1 , 2N60 , AUIRF7732S2TR , AUIRF7734M2 , AUIRF7736M2TR1 , AUIRF7737L2TR1 , AUIRF7738L2TR , AUIRF7739L2TR , AUIRF7759L2 , AUIRF7769L2 .
History: AUIRF7737L2TR1
History: AUIRF7737L2TR1
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