AUIRFN7107 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AUIRFN7107
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 4.4 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 14 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 51 nC
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 371 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm
Paquete / Cubierta: PQFN
Búsqueda de reemplazo de MOSFET AUIRFN7107
AUIRFN7107 Datasheet (PDF)
auirfn7107.pdf
AUTOMOTIVE GRADE AUIRFN7107 Features HEXFET POWER MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 75V 175C Operating Temperature Fast Switching RDS(on) max Repetitive Avalanche Allowed up to Tjmax 8.5m (@VGS = 10V) Lead-Free, RoHS Compliant Automotive Qualified * QG (typical) 51nCID Descrip
auirfn8405tr.pdf
AUTOMOTIVE GRADE AUIRFN8405 Features HEXFET POWER MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 40V 175C Operating Temperature RDS(on) typ. 1.6m Fast Switching Repetitive Avalanche Allowed up to Tjmax max 2.0m Lead-Free, RoHS Compliant ID (Silicon Limited) 187A Automotive Qualified *
auirfn8401.pdf
AUTOMOTIVE GRADE AUIRFN8401 Features HEXFET POWER MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 40V 175C Operating Temperature RDS(on) typ. 3.6m Fast Switching Repetitive Avalanche Allowed up to Tjmax max 4.6m Lead-Free, RoHS Compliant ID (Silicon Limited) 84A Automotive Qualified * De
auirfn8405.pdf
AUTOMOTIVE GRADE AUIRFN8405 Features HEXFET POWER MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 40V 175C Operating Temperature RDS(on) typ. 1.6m Fast Switching Repetitive Avalanche Allowed up to Tjmax max 2.0m Lead-Free, RoHS Compliant ID (Silicon Limited) 187A Automotive Qualified *
auirfn8458.pdf
AUTOMOTIVE GRADE AUIRFN8458 Features VDSS 40V Advanced Process Technology Dual N-Channel MOSFETRDS(on) typ. 8.0m Ultra Low On-Resistance max10m 175C Operating Temperature Fast SwitchingID Repetitive Avalanche Allowed up to Tjmax 43A (@TC (Bottom) = 25C Lead-Free, RoHS Compliant Automotive Qualified * Description Spe
auirfn8403.pdf
AUTOMOTIVE GRADE AUIRFN8403 Features HEXFET POWER MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 40V 175C Operating Temperature RDS(on) typ. 2.5m Fast Switching Repetitive Avalanche Allowed up to Tjmax max 3.3m Lead-Free, RoHS Compliant ID (Silicon Limited) 123A Automotive Qualified *
auirfn8459.pdf
AUTOMOTIVE GRADE AUIRFN8459 Features VDSS 40V Advanced Process Technology RDS(on) typ. 4.8m Dual N-Channel MOSFET Ultra Low On-Resistance 5.9mmax 175C Operating Temperature ID (Silicon Limited) 70A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 50A Lead-Free, RoHS Compliant Automot
auirfn8401.pdf
AUTOMOTIVE GRADE AUIRFN8401 Features HEXFET POWER MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 40V 175C Operating Temperature RDS(on) typ. 3.6m Fast Switching Repetitive Avalanche Allowed up to Tjmax max 4.6m Lead-Free, RoHS Compliant ID (Silicon Limited) 84A Automotive Qualified * De
auirfn8405.pdf
AUTOMOTIVE GRADE AUIRFN8405 Features HEXFET POWER MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 40V 175C Operating Temperature RDS(on) typ. 1.6m Fast Switching Repetitive Avalanche Allowed up to Tjmax max 2.0m Lead-Free, RoHS Compliant ID (Silicon Limited) 187A Automotive Qualified *
auirfn8458.pdf
AUTOMOTIVE GRADE AUIRFN8458 Features VDSS 40V Advanced Process Technology Dual N-Channel MOSFETRDS(on) typ. 8.0m Ultra Low On-Resistance max10m 175C Operating Temperature Fast SwitchingID Repetitive Avalanche Allowed up to Tjmax 43A (@TC (Bottom) = 25C Lead-Free, RoHS Compliant Automotive Qualified * Description Spe
auirfn8403.pdf
AUTOMOTIVE GRADE AUIRFN8403 Features HEXFET POWER MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 40V 175C Operating Temperature RDS(on) typ. 2.5m Fast Switching Repetitive Avalanche Allowed up to Tjmax max 3.3m Lead-Free, RoHS Compliant ID (Silicon Limited) 123A Automotive Qualified *
auirfn8459.pdf
AUTOMOTIVE GRADE AUIRFN8459 Features VDSS 40V Advanced Process Technology RDS(on) typ. 4.8m Dual N-Channel MOSFET Ultra Low On-Resistance 5.9m max 175C Operating Temperature ID (Silicon Limited) 70A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 50A Lead-Free, RoHS Compliant Automotive
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Liste
Recientemente añadidas las descripciónes de los transistores:
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