AUIRFN7107 MOSFET Datasheet: N-Ch, 75V, 14A. Full specification with pinout and replacement list

AUIRFN7107 Specs and Replacement

Type Designator: AUIRFN7107

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 4.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 371 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: PQFN

AUIRFN7107 substitution

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AUIRFN7107 datasheet

..1. Size:546K international rectifier
auirfn7107.pdf pdf_icon

AUTOMOTIVE GRADE AUIRFN7107 Features HEXFET POWER MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 75V 175 C Operating Temperature Fast Switching RDS(on) max Repetitive Avalanche Allowed up to Tjmax 8.5m (@VGS = 10V) Lead-Free, RoHS Compliant Automotive Qualified * QG (typical) 51nC ID Descrip... See More ⇒

8.1. Size:561K 1
auirfn8405tr.pdf pdf_icon

AUTOMOTIVE GRADE AUIRFN8405 Features HEXFET POWER MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 40V 175 C Operating Temperature RDS(on) typ. 1.6m Fast Switching Repetitive Avalanche Allowed up to Tjmax max 2.0m Lead-Free, RoHS Compliant ID (Silicon Limited) 187A Automotive Qualified * ... See More ⇒

8.2. Size:611K international rectifier
auirfn8401.pdf pdf_icon

AUTOMOTIVE GRADE AUIRFN8401 Features HEXFET POWER MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 40V 175 C Operating Temperature RDS(on) typ. 3.6m Fast Switching Repetitive Avalanche Allowed up to Tjmax max 4.6m Lead-Free, RoHS Compliant ID (Silicon Limited) 84A Automotive Qualified * De... See More ⇒

8.3. Size:576K international rectifier
auirfn8405.pdf pdf_icon