AUIRFR4104TR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AUIRFR4104TR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 140 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 42 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 69 nS

Cossⓘ - Capacitancia de salida: 660 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm

Encapsulados: TO-252

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AUIRFR4104TR datasheet

 ..1. Size:317K  international rectifier
 auirfr4104tr.pdf pdf_icon

AUIRFR4104TR

PD - 97452A AUIRFR4104 AUTOMOTIVE GRADE AUIRFU4104 HEXFET Power MOSFET Features Advanced Process Technology D Ultra Low On-Resistance V(BR)DSS 40V 175 C Operating Temperature RDS(on) max. 5.5m Fast Switching G Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 119A Lead-Free, RoHS Compliant S ID (Package Limited) 42A Automotive Q

 4.1. Size:715K  infineon
 auirfr4104 auirfu4104.pdf pdf_icon

AUIRFR4104TR

AUIRFR4104 AUTOMOTIVE GRADE AUIRFU4104 Features HEXFET Power MOSFET Advanced Process Technology Low On-Resistance VDSS 40V 175 C Operating Temperature RDS(on) max. 5.5m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 119A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D

 5.1. Size:317K  international rectifier
 auirfr4105ztr.pdf pdf_icon

AUIRFR4104TR

PD - 97544 AUTOMOTIVE GRADE AUIRFR4105Z AUIRFU4105Z HEXFET Power MOSFET Features D Advanced Process Technology V(BR)DSS 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) max. 24.5m G Fast Switching Repetitive Avalanche Allowed up to Tjmax ID S 30A Lead-Free, RoHS Compliant Automotive Qualified * Description D Specifically de

 5.2. Size:238K  international rectifier
 auirfr4105tr.pdf pdf_icon

AUIRFR4104TR

PD - 97597A AUTOMOTIVE GRADE AUIRFR4105 HEXFET Power MOSFET Features D V(BR)DSS 55V Advanced Planar Technology Low On-Resistance RDS(on) max. 45m Dynamic dV/dT Rating G ID (Silicon Limited) 27A 175 C Operating Temperature Fast Switching ID (Package Limited) 20A S Fully Avalanche Rated Repetitive Avalanche Allowed up toTjmax Lead-Free,

MOSTRAR MÁS

Otros transistores... AUIRFP4409, AUIRFP4568-E, AUIRFR120ZTRL, AUIRFR2307ZTR, AUIRFR2607ZTR, AUIRFR2905ZTR, AUIRFR3504ZTR, AUIRFR3710ZTRL, IRF540, AUIRFR4105TR, AUIRFR4105ZTR, AUIRFR4292, AUIRFR48ZTR, AUIRFR5305TR, AUIRFR540Z, AUIRFR5410TR, AUIRFR5505TR