AUIRFR48ZTR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AUIRFR48ZTR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 91 W
Voltaje máximo drenador - fuente |Vds|: 55 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 42 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 40 nC
Tiempo de subida (tr): 61 nS
Conductancia de drenaje-sustrato (Cd): 290 pF
Resistencia entre drenaje y fuente RDS(on): 0.011 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de MOSFET AUIRFR48ZTR
AUIRFR48ZTR Datasheet (PDF)
auirfr48ztr.pdf
PD - 97586AUTOMOTIVE GRADEAUIRFR48ZHEXFET Power MOSFETFeatures Advanced Process TechnologyDV(BR)DSS 55V Ultra Low On-ResistanceRDS(on) max.11m 175C Operating Temperature Fast Switching GID (Silicon Limited)62A Repetitive Avalanche Allowed up to TjmaxSID (Package Limited) 42A Lead-Free, RoHS Compliant Automotive Qualified *Des
auirfr48z.pdf
AUTOMOTIVE GRADE AUIRFR48Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 55V 175C Operating Temperature RDS(on) max. 11m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 62A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D Descript
auirfr4104tr.pdf
PD - 97452AAUIRFR4104AUTOMOTIVE GRADEAUIRFU4104HEXFET Power MOSFETFeatures Advanced Process TechnologyD Ultra Low On-ResistanceV(BR)DSS 40V 175C Operating TemperatureRDS(on) max.5.5m Fast SwitchingG Repetitive Avalanche Allowed up to TjmaxID (Silicon Limited)119A Lead-Free, RoHS CompliantSID (Package Limited) 42A Automotive Q
auirfr4292 auirfu4292.pdf
AUIRFR4292AUTOMOTIVE GRADEAUIRFU4292FeaturesHEXFET Power MOSFET Advanced Process TechnologyDV(BR)DSS 250V Low On-ResistanceRDS(on) typ. 275m 175C Operating TemperatureG Fast Switching max. 345m Repetitive Avalanche Allowed up to Tjmax SID 9.3A Lead-Free, RoHS Compliant Automotive Qualified *DDescriptionSpecifically designed for Automotive applicatio
auirfr4105ztr.pdf
PD - 97544AUTOMOTIVE GRADE AUIRFR4105ZAUIRFU4105ZHEXFET Power MOSFETFeaturesD Advanced Process TechnologyV(BR)DSS55V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) max.24.5mG Fast Switching Repetitive Avalanche Allowed up to Tjmax IDS 30A Lead-Free, RoHS Compliant Automotive Qualified *DescriptionDSpecifically de
auirfr4105tr.pdf
PD - 97597AAUTOMOTIVE GRADEAUIRFR4105HEXFET Power MOSFETFeaturesDV(BR)DSS55V Advanced Planar Technology Low On-ResistanceRDS(on) max.45m Dynamic dV/dT RatingGID (Silicon Limited)27A 175C Operating Temperature Fast SwitchingID (Package Limited)20AS Fully Avalanche Rated Repetitive Avalanche Allowedup toTjmax Lead-Free,
auirfr4292 auirfu4292.pdf
AUIRFR4292 AUTOMOTIVE GRADE AUIRFU4292 Features VDSS 250V Advanced Process Technology RDS(on) typ. 275m Low On-Resistance max. 175C Operating Temperature 345m Fast Switching ID 9.3A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Automotive Qualified * D S S Description D G G Specifical
auirfr4615 auirfu4615.pdf
PD -96398AAUTOMOTIVE GRADEAUIRFR4615AUIRFU4615FeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl Low On-ResistanceVDSS150Vl 175C Operating Temperaturel Fast Switching RDS(on) typ.34ml Repetitive Avalanche Allowed up to TjmaxG max. 42ml Lead-Free, RoHS Compliantl Automotive Qualified *ID 33ASDescriptionDDSpecifically designed for Automo
auirfr4620.pdf
AUTOMOTIVE GRADE AUIRFR4620 Features HEXFET Power MOSFET Advanced Process Technology VDSS 200V Ultra Low On-Resistance RDS(on) typ. 64m Dynamic dV/dT Rating max. 78m 175C Operating Temperature ID 24A Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Descrip
auirfr4104 auirfu4104.pdf
AUIRFR4104 AUTOMOTIVE GRADE AUIRFU4104 Features HEXFET Power MOSFET Advanced Process Technology Low On-Resistance VDSS 40V 175C Operating Temperature RDS(on) max. 5.5m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 119A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D
auirfr4105z auirfu4105z.pdf
AUIRFR4105Z AUTOMOTIVE GRADE AUIRFU4105Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 55V 175C Operating Temperature Fast Switching RDS(on) max. 24.5m Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID 30A Automotive Qualified * D D Description Specifically designed
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