AUIRFR8401 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AUIRFR8401

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 79 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 34 nS

Cossⓘ - Capacitancia de salida: 340 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.00425 Ohm

Encapsulados: TO-252

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AUIRFR8401 datasheet

 ..1. Size:453K  international rectifier
 auirfr8401 auirfu8401.pdf pdf_icon

AUIRFR8401

AUIRFR8401 AUTOMOTIVE GRADE AUIRFU8401 HEXFET Power MOSFET Features VDSS 40V D Advanced Process Technology New Ultra Low On-Resistance RDS(on) typ. 3.2m 175 C Operating Temperature 4.25m G max Fast Switching ID (Silicon Limited) 100A Repetitive Avalanche Allowed up to Tjmax S Lead-Free, RoHS Compliant ID

 ..2. Size:679K  infineon
 auirfr8401 auirfu8401.pdf pdf_icon

AUIRFR8401

AUIRFR8401 AUTOMOTIVE GRADE AUIRFU8401 Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V New Ultra Low On-Resistance 175 C Operating Temperature RDS(on) typ. 3.2m Fast Switching max. 4.25m Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 100A Lead-Free, RoHS Compliant ID (Package Limited) 100A

 5.1. Size:279K  international rectifier
 auirfr8403 auirfu8403.pdf pdf_icon

AUIRFR8401

AUIRFR8403 AUIRFU8403 AUTOMOTIVE GRADE Features HEXFET Power MOSFET l Advanced Process Technology D VDSS 40V l New Ultra Low On-Resistance l 175 C Operating Temperature RDS(on) typ. 2.4m l Fast Switching l Repetitive Avalanche Allowed up to Tjmax max. 3.1m G l Lead-Free, RoHS Compliant ID (Silicon Limited) 127A l Automotive Qualified * Description S ID (Package L

 5.2. Size:292K  international rectifier
 auirfr8405 auirfu8405.pdf pdf_icon

AUIRFR8401

AUIRFR8405 AUTOMOTIVE GRADE AUIRFU8405 Features HEXFET Power MOSFET l Advanced Process Technology l New Ultra Low On-Resistance VDSS 40V l 175 C Operating Temperature RDS(on) typ. 1.65m l Fast Switching l Repetitive Avalanche Allowed up to Tjmax max. 1.98m l Lead-Free, RoHS Compliant l Automotive Qualified * ID (Silicon Limited) 211A Description Specifically designed for A

MOSTRAR MÁS

Otros transistores... AUIRFR4105ZTR, AUIRFR4292, AUIRFR48ZTR, AUIRFR5305TR, AUIRFR540Z, AUIRFR5410TR, AUIRFR5505TR, AUIRFR6215TR, AO3400, AUIRFR8403, AUIRFR8405, AUIRFS4310TRL, AUIRFS4610TRL, AUIRFS6535, AUIRFS8403, AUIRFS8405, AUIRFS8407