AUIRFS6535 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AUIRFS6535
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 210 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 300 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 19 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 16 nS
Cossⓘ - Capacitancia de salida: 195 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.185 Ohm
Encapsulados: TO-263
Búsqueda de reemplazo de AUIRFS6535 MOSFET
- Selecciónⓘ de transistores por parámetros
AUIRFS6535 datasheet
..1. Size:266K international rectifier
auirfs6535 auirfsl6535.pdf 
AUTOMOTIVE GRADE AUIRFS6535 AUIRFSL6535 Features HEXFET Power MOSFET Advanced Process Technology D Low On-Resistance V(BR)DSS 300V 175 C Operating Temperature RDS(on) typ. 148m Fast Switching G max. 185m Repetitive Avalanche Allowed up to Tjmax S ID 19A Lead-Free, RoHS Compliant Automotive Qualified * Description D Specifically designed
..2. Size:701K infineon
auirfs6535 auirfsl6535.pdf
AUTOMOTIVE GRADE AUIRFS6535 AUIRFSL6535 HEXFET Power MOSFET Features Advanced Process Technology VDSS 300V Low On-Resistance RDS(on) typ. 148m 175 C Operating Temperature Fast Switching max. 185m Repetitive Avalanche Allowed up to Tjmax ID 19A Lead-Free, RoHS Compliant Automotive Qualified * D D Description Specific
8.1. Size:277K international rectifier
auirfs8403 auirfsl8403.pdf
AUIRFS8403 AUTOMOTIVE GRADE AUIRFSL8403 HEXFET Power MOSFET Features l Advanced Process Technology D VDSS 40V l New Ultra Low On-Resistance l 175 C Operating Temperature RDS(on) typ. 2.6m l Fast Switching l Repetitive Avalanche Allowed up to Tjmax G max. 3.3m l Lead-Free, RoHS Compliant Automotive Qualified * S ID (Silicon Limited) 123A Description Specifically desi
8.2. Size:277K international rectifier
auirfs8409-7p.pdf
AUIRFS8409-7P AUTOMOTIVE GRADE Features HEXFET Power MOSFET l Advanced Process Technology 40V VDSS l New Ultra Low On-Resistance 0.55m RDS(on) typ. l 175 C Operating Temperature max. 0.75m l Fast Switching l Repetitive Avalanche Allowed up to Tjmax 522A ID (Silicon Limited) l Lead-Free, RoHS Compliant 240A ID (Package Limited) l Automotive Qualified * Description
8.3. Size:340K international rectifier
auirfs4610trl.pdf
PD - 96325 AUTOMOTIVE GRADE AUIRFB4610 AUIRFS4610 Features HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance V(BR)DSS 100V Enhanced dV/dT and dI/dT capability RDS(on) typ. 11m 175 C Operating Temperature Fast Switching max. 14m G Repetitive Avalanche Allowed up to Tjmax ID 73A Lead-Free, RoHS Compliant S Automotive Qualified * D Descripti
8.4. Size:398K international rectifier
auirfb8409 auirfs8409 auirfsl8409.pdf
AUIRFB8409 AUTOMOTIVE GRADE AUIRFS8409 AUIRFSL8409 Features HEXFET Power MOSFET l Advanced Process Technology D l New Ultra Low On-Resistance VDSS 40V l 175 C Operating Temperature RDS(on) (SMD) typ. 0.97m l Fast Switching max. 1.2m l Repetitive Avalanche Allowed up to Tjmax G l Lead-Free, RoHS Compliant ID (Silicon Limited) 409A l Automotive Qualified * ID (Package Li
8.5. Size:289K international rectifier
auirfs4410z auirfsl4410z.pdf
PD - 96405A AUTOMOTIVE GRADE AUIRFS4410Z AUIRFSL4410Z Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance l 175 C Operating Temperature D VDSS 100V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) typ. 7.2m l Lead-Free, RoHS Compliant max. 9.0m G l Automotive Qualified * ID 97A S Description Specifically desig
8.6. Size:334K international rectifier
auirfs4310trl.pdf
PD - 96324 AUTOMOTIVE GRADE AUIRFS4310 AUIRFSL4310 Features HEXFET Power MOSFET l Advanced Process Technology V(BR)DSS l Ultra Low On-Resistance 100V D l 175 C Operating Temperature RDS(on) typ. 5.6m l Fast Switching l Repetitive Avalanche Allowed up to Tjmax max. 7.0m G l Lead-Free, RoHS Compliant ID (Silicon Limited) 130A l Automotive Qualified * S ID (Package L
8.7. Size:285K international rectifier
auirfsl4115.pdf
AUIRFS4115 AUTOMOTIVE GRADE AUIRFSL4115 HEXFET Power MOSFET Features D VDSS 150V l Advanced Process Technology l Ultra Low On-Resistance RDS(on) typ. 10.3m l 175 C Operating Temperature l Fast Switching G max. 12.1m l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant ID 99A l Automotive Qualified * S D Description D Specifically designed for A
8.8. Size:351K international rectifier
auirfs8405 auirfsl8405.pdf
AUIRFS8405 AUTOMOTIVE GRADE AUIRFSL8405 Features HEXFET Power MOSFET l Advanced Process Technology D l New Ultra Low On-Resistance VDSS 40V l 175 C Operating Temperature RDS(on) typ.1.9m l Fast Switching max. 2.3m l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant G ID (Silicon Limited) 193A l Automotive Qualified * ID (Package Limited) 120A S De
8.9. Size:340K international rectifier
auirfb8407 auirfs8407 auirfsl8407.pdf
AUIRFB8407 AUTOMOTIVE GRADE AUIRFS8407 AUIRFSL8407 Features HEXFET Power MOSFET l Advanced Process Technology l New Ultra Low On-Resistance VDSS 40V D l 175 C Operating Temperature RDS(on) typ. 1.4m l Fast Switching l Repetitive Avalanche Allowed up to Tjmax (SMD version) max. 1.8m l Lead-Free, RoHS Compliant G 250A ID (Silicon Limited) Automotive Qualified * S
8.10. Size:220K international rectifier
auirfs8407-7p.pdf
AUTOMOTIVE GRADE AUIRFS8407-7P Features HEXFET Power MOSFET Advanced Process Technology D New Ultra Low On-Resistance VDSS 40V 175 C Operating Temperature RDS(on) typ.1.0m Fast Switching Repetitive Avalanche Allowed up to Tjmax max. 1.3m Lead-Free, RoHS Compliant G ID (Silicon Limited) 306A Automotive Qualified * Description ID (Package L
8.11. Size:291K international rectifier
auirfs8408 auirfsl8408.pdf
AUIRFS8408 AUTOMOTIVE GRADE AUIRFSL8408 Features HEXFET Power MOSFET l Advanced Process Technology VDSS 40V l New Ultra Low On-Resistance l 175 C Operating Temperature RDS(on) typ. 1.3m l Fast Switching max. 1.6m l Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 317A l Lead-Free, RoHS Compliant l Automotive Qualified * ID (Package Limited) 195A Descri
8.12. Size:275K international rectifier
auirfs8408-7p.pdf
AUIRFS8408-7P AUTOMOTIVE GRADE Features HEXFET Power MOSFET l Advanced Process Technology 40V VDSS l New Ultra Low On-Resistance 0.70m RDS(on) typ. l 175 C Operating Temperature l Fast Switching max. 1.0m l Repetitive Avalanche Allowed up to Tjmax 397A ID (Silicon Limited) l Lead-Free, RoHS Compliant 240A ID (Package Limited) l Automotive Qualified * Description
8.13. Size:716K infineon
auirfs3206 auirfsl3206.pdf
AUIRFS3206 AUTOMOTIVE GRADE AUIRFSL3206 HEXFET Power MOSFET Features VDSS 60V Advanced Process Technology RDS(on) typ. 2.4m Ultra Low On-Resistance max. 3.0m Enhanced dV/dT and dI/dT capability 175 C Operating Temperature ID (Silicon Limited) 210A Fast Switching ID (Package Limited) 120A Repetitive Avalanche Allowed up to Tj
8.14. Size:694K infineon
auirfs3107-7p.pdf
AUTOMOTIVE GRADE AUIRFS3107-7P HEXFET Power MOSFET Features VDSS 75V Advanced Process Technology RDS(on) typ. 2.1m Ultra Low On-Resistance max. 2.6m Enhanced dV/dT and dI/dT capability 175 C Operating Temperature ID (Silicon Limited) 260A Fast Switching ID (Package Limited) 240A Repetitive Avalanche Allowed up to Tjmax Lea
8.16. Size:667K infineon
auirfs3006.pdf
AUTOMOTIVE GRADE AUIRFS3006 HEXFET Power MOSFET Features VDSS 60V Advanced Process Technology RDS(on) typ. 2.0m Ultra Low On-Resistance max. Dynamic dv/dt Rating 2.5m 175 C Operating Temperature ID (Silicon Limited) 270A Fast Switching ID (Package Limited) 195A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compl
8.17. Size:453K infineon
auirfs3004-7p.pdf
AUIRFS3004-7P AUTOMOTIVE GRADE HEXFET Power MOSFET Features VDSS 40V Advanced Process Technology RDS(on) typ. 0.90m Ultra Low On-Resistance 175 C Operating Temperature max. 1.25m Fast Switching ID (Silicon Limited) 400A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 240A Lead-Free, RoHS Compliant Automotive Q
8.18. Size:672K infineon
auirfs4310z.pdf
AUTOMOTIVE GRADE AUIRFS4310Z HEXFET Power MOSFET Features VDSS 100V Advanced Process Technology RDS(on) typ. 4.8m Ultra Low On-Resistance max. Dynamic dv/dt Rating 6.0m 175 C Operating Temperature ID (Silicon Limited) 127A Fast Switching ID (Package Limited) 120A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS
8.19. Size:680K infineon
auirfs4115-7p.pdf
AUIRFS4115-7P AUTOMOTIVE GRADE HEXFET Power MOSFET Features Advanced Process Technology VDSS 150V Ultra Low On-Resistance RDS(on) typ. 10m Dynamic dV/dT Rating max. 11.8m 175 C Operating Temperature ID 105A Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * Descrip
8.20. Size:446K infineon
auirfs4127.pdf
AUIRFS4127 AUTOMOTIVE GRADE Features HEXFET Power MOSFET Advanced Process Technology D VDSS 200V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) typ. 18.6m Fast Switching G Repetitive Avalanche Allowed up to Tjmax max 22m Lead-Free, RoHS Compliant S ID 72A Automotive Qualified * Description D Speci
8.21. Size:691K infineon
auirfsa8409-7p.pdf
AUTOMOTIVE GRADE AUIRFSA8409-7P Features VDSS 40V Advanced Process Technology RDS(on) typ. 0.50m New Ultra Low On-Resistance max. 175 C Operating Temperature 0.69m Fast Switching ID (Silicon Limited) 523A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 360A Lead-Free, RoHS Compliant Automotive Qualified * Descr
8.22. Size:711K infineon
auirfs4010 auirfsl4010.pdf
AUIRFS4010 AUTOMOTIVE GRADE AUIRFSL4010 HEXFET Power MOSFET VDSS 100V Features Advanced Process Technology RDS(on) typ. 3.9m Ultra Low On-Resistance max. 4.7m 175 C Operating Temperature Fast Switching ID 180A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D D Automotive Qualified * Description S S
8.23. Size:707K infineon
auirfs3307z auirfsl3307z.pdf
AUIRFS3307Z AUTOMOTIVE GRADE AUIRFSL3307Z HEXFET Power MOSFET Features VDSS 75V Advanced Process Technology RDS(on) typ. 4.6m Ultra Low On-Resistance max. 5.8m 175 C Operating Temperature Fast Switching ID (Silicon Limited) 128A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 120A Lead-Free, RoHS Compliant
8.24. Size:682K infineon
auirfs3006-7p.pdf
AUIRFS3006-7P AUTOMOTIVE GRADE HEXFET Power MOSFET Features Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 1.5m Dynamic dV/dT Rating max. 2.1m 175 C Operating Temperature ID (Silicon Limited) 293A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 240A Lead-Free, RoHS
8.25. Size:681K infineon
auirfs3306.pdf
AUTOMOTIVE GRADE AUIRFS3306 HEXFET Power MOSFET Features VDSS 60V Advanced Process Technology RDS(on) typ. 3.3m Ultra Low On-Resistance max. 175 C Operating Temperature 4.2m Fast Switching ID (Silicon Limited) 160A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 120A Lead-Free, RoHS Compliant Automotive Q
8.27. Size:709K infineon
auirfs3607 auirfsl3607.pdf
AUIRFS3607 AUTOMOTIVE GRADE AUIRFSL3607 HEXFET Power MOSFET Features VDSS 75V Advanced Process Technology RDS(on) typ. 7.34m Low On-Resistance 175 C Operating Temperature max. 9.0m Fast Switching ID 80A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D D Description Specifi
8.28. Size:717K infineon
auirfb4610 auirfs4610.pdf
AUIRFB4610 AUTOMOTIVE GRADE AUIRFS4610 HEXFET Power MOSFET Features Advanced Process Technology VDSS 100V Ultra Low On-Resistance RDS(on) typ. 11m Enhanced dV/dT and dI/dT capability 175 C Operating Temperature max. 14m Fast Switching ID 73A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive
8.29. Size:712K infineon
auirfs4310 auirfsl4310.pdf
AUIRFS4310 AUTOMOTIVE GRADE AUIRFSL4310 HEXFET Power MOSFET Features VDSS 100V Advanced Process Technology RDS(on) typ. 5.6m Ultra Low On-Resistance max. 7.0m 175 C Operating Temperature Fast Switching ID (Silicon Limited) 130A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-Free, RoHS Compliant Au
8.30. Size:716K infineon
auirfs3107 auirfsl3107.pdf
AUIRFS3107 AUTOMOTIVE GRADE AUIRFSL3107 HEXFET Power MOSFET Features VDSS 75V Advanced Process Technology RDS(on) typ. 2.5m Ultra Low On-Resistance max. 3.0m Enhanced dV/dT and dI/dT capability 175 C Operating Temperature ID (Silicon Limited) 230A Fast Switching ID (Package Limited) 195A Repetitive Avalanche Allowed up t
8.31. Size:738K infineon
auirfs3806.pdf
AUTOMOTIVE GRADE AUIRFS3806 HEXFET Power MOSFET Features VDSS 60V Advanced Process Technology RDS(on) typ. 12.6m 175 C Operating Temperature Fast Switching max. 15.8m Repetitive Avalanche Allowed up to Tjmax ID 43A Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifically designed for Automotive applications
8.32. Size:722K infineon
auirfs4115 auirfsl4115.pdf
AUIRFS4115 AUTOMOTIVE GRADE AUIRFSL4115 HEXFET Power MOSFET VDSS 150V Features Advanced Process Technology RDS(on) typ. 10.3m Ultra Low On-Resistance max. 12.1m 175 C Operating Temperature Fast Switching ID 99A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D D Automotive Qualified * Description S S
8.33. Size:702K infineon
auirfs4010-7p.pdf
AUTOMOTIVE GRADE AUIRFS4010-7P HEXFET Power MOSFET VDSS 100V Features RDS(on) typ. 3.3m Advanced Process Technology Ultra Low On-Resistance max. 4.0m Enhanced dV/dT and dI/dT capability ID 190A 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualifie
Otros transistores... AUIRFR5410TR, AUIRFR5505TR, AUIRFR6215TR, AUIRFR8401, AUIRFR8403, AUIRFR8405, AUIRFS4310TRL, AUIRFS4610TRL, IRFB4115, AUIRFS8403, AUIRFS8405, AUIRFS8407, AUIRFS8407-7P, AUIRFS8408, AUIRFS8408-7P, AUIRFS8409, AUIRFS8409-7P
