AUIRFSL8405 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AUIRFSL8405
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 163 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.9 VQgⓘ - Carga de la puerta: 107 nC
trⓘ - Tiempo de subida: 128 nS
Cossⓘ - Capacitancia de salida: 754 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0023 Ohm
Paquete / Cubierta: TO-262
Búsqueda de reemplazo de MOSFET AUIRFSL8405
AUIRFSL8405 Datasheet (PDF)
auirfs8405 auirfsl8405.pdf
AUIRFS8405AUTOMOTIVE GRADEAUIRFSL8405FeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl New Ultra Low On-Resistance VDSS 40Vl 175C Operating TemperatureRDS(on) typ.1.9ml Fast Switching max. 2.3ml Repetitive Avalanche Allowed up to Tjmaxl Lead-Free, RoHS Compliant GID (Silicon Limited) 193Al Automotive Qualified *ID (Package Limited) 120A SDe
auirfs8405 auirfsl8405.pdf
AUIRFS8405AUTOMOTIVE GRADEAUIRFSL8405FeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl New Ultra Low On-Resistance VDSS 40Vl 175C Operating TemperatureRDS(on) typ.1.9ml Fast Switching max. 2.3ml Repetitive Avalanche Allowed up to Tjmaxl Lead-Free, RoHS Compliant GID (Silicon Limited) 193Al Automotive Qualified *ID (Package Limited) 120A SDe
auirfs8403 auirfsl8403.pdf
AUIRFS8403AUTOMOTIVE GRADEAUIRFSL8403HEXFET Power MOSFETFeaturesl Advanced Process TechnologyDVDSS 40Vl New Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) typ. 2.6ml Fast Switchingl Repetitive Avalanche Allowed up to TjmaxG max. 3.3ml Lead-Free, RoHS Compliant Automotive Qualified *SID (Silicon Limited) 123ADescriptionSpecifically desi
auirfb8409 auirfs8409 auirfsl8409.pdf
AUIRFB8409AUTOMOTIVE GRADE AUIRFS8409AUIRFSL8409FeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl New Ultra Low On-Resistance VDSS 40Vl 175C Operating TemperatureRDS(on) (SMD) typ. 0.97ml Fast Switching max. 1.2ml Repetitive Avalanche Allowed up to TjmaxGl Lead-Free, RoHS Compliant ID (Silicon Limited) 409Al Automotive Qualified *ID (Package Li
auirfb8407 auirfs8407 auirfsl8407.pdf
AUIRFB8407AUTOMOTIVE GRADEAUIRFS8407AUIRFSL8407FeaturesHEXFET Power MOSFETl Advanced Process Technologyl New Ultra Low On-ResistanceVDSS 40VDl 175C Operating TemperatureRDS(on) typ. 1.4ml Fast Switching l Repetitive Avalanche Allowed up to Tjmax(SMD version) max. 1.8m l Lead-Free, RoHS CompliantG250AID (Silicon Limited) Automotive Qualified *S
auirfs8408 auirfsl8408.pdf
AUIRFS8408AUTOMOTIVE GRADEAUIRFSL8408FeaturesHEXFET Power MOSFETl Advanced Process TechnologyVDSS 40Vl New Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) typ. 1.3ml Fast Switching max. 1.6ml Repetitive Avalanche Allowed up to TjmaxID (Silicon Limited) 317Al Lead-Free, RoHS Compliantl Automotive Qualified *ID (Package Limited) 195A Descri
auirfs8403 auirfsl8403.pdf
AUIRFS8403AUTOMOTIVE GRADEAUIRFSL8403HEXFET Power MOSFETFeaturesl Advanced Process TechnologyDVDSS 40Vl New Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) typ. 2.6ml Fast Switchingl Repetitive Avalanche Allowed up to TjmaxG max. 3.3ml Lead-Free, RoHS Compliant Automotive Qualified *SID (Silicon Limited) 123ADescriptionSpecifically desi
auirfb8409 auirfs8409 auirfsl8409.pdf
AUIRFB8409AUTOMOTIVE GRADE AUIRFS8409AUIRFSL8409FeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl New Ultra Low On-Resistance VDSS 40Vl 175C Operating TemperatureRDS(on) (SMD) typ. 0.97ml Fast Switching max. 1.2ml Repetitive Avalanche Allowed up to TjmaxGl Lead-Free, RoHS Compliant ID (Silicon Limited) 409Al Automotive Qualified *ID (Package Li
auirfb8407 auirfs8407 auirfsl8407.pdf
AUIRFB8407AUTOMOTIVE GRADEAUIRFS8407AUIRFSL8407FeaturesHEXFET Power MOSFETl Advanced Process Technologyl New Ultra Low On-ResistanceVDSS 40VDl 175C Operating TemperatureRDS(on) typ. 1.4ml Fast Switching l Repetitive Avalanche Allowed up to Tjmax(SMD version) max. 1.8m l Lead-Free, RoHS CompliantG250AID (Silicon Limited) Automotive Qualified *S
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F