All MOSFET. AUIRFSL8405 Datasheet

 

AUIRFSL8405 Datasheet and Replacement


   Type Designator: AUIRFSL8405
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 163 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 128 nS
   Cossⓘ - Output Capacitance: 754 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm
   Package: TO-262
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AUIRFSL8405 Datasheet (PDF)

 ..1. Size:351K  international rectifier
 auirfs8405 auirfsl8405.pdf pdf_icon

AUIRFSL8405

AUIRFS8405AUTOMOTIVE GRADEAUIRFSL8405FeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl New Ultra Low On-Resistance VDSS 40Vl 175C Operating TemperatureRDS(on) typ.1.9ml Fast Switching max. 2.3ml Repetitive Avalanche Allowed up to Tjmaxl Lead-Free, RoHS Compliant GID (Silicon Limited) 193Al Automotive Qualified *ID (Package Limited) 120A SDe

 4.1. Size:277K  international rectifier
 auirfs8403 auirfsl8403.pdf pdf_icon

AUIRFSL8405

AUIRFS8403AUTOMOTIVE GRADEAUIRFSL8403HEXFET Power MOSFETFeaturesl Advanced Process TechnologyDVDSS 40Vl New Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) typ. 2.6ml Fast Switchingl Repetitive Avalanche Allowed up to TjmaxG max. 3.3ml Lead-Free, RoHS Compliant Automotive Qualified *SID (Silicon Limited) 123ADescriptionSpecifically desi

 4.2. Size:398K  international rectifier
 auirfb8409 auirfs8409 auirfsl8409.pdf pdf_icon

AUIRFSL8405

AUIRFB8409AUTOMOTIVE GRADE AUIRFS8409AUIRFSL8409FeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl New Ultra Low On-Resistance VDSS 40Vl 175C Operating TemperatureRDS(on) (SMD) typ. 0.97ml Fast Switching max. 1.2ml Repetitive Avalanche Allowed up to TjmaxGl Lead-Free, RoHS Compliant ID (Silicon Limited) 409Al Automotive Qualified *ID (Package Li

 4.3. Size:340K  international rectifier
 auirfb8407 auirfs8407 auirfsl8407.pdf pdf_icon

AUIRFSL8405

AUIRFB8407AUTOMOTIVE GRADEAUIRFS8407AUIRFSL8407FeaturesHEXFET Power MOSFETl Advanced Process Technologyl New Ultra Low On-ResistanceVDSS 40VDl 175C Operating TemperatureRDS(on) typ. 1.4ml Fast Switching l Repetitive Avalanche Allowed up to Tjmax(SMD version) max. 1.8m l Lead-Free, RoHS CompliantG250AID (Silicon Limited) Automotive Qualified *S

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History: BUZ73 | AON6794 | IRFHM792PBF | BUZ84 | FQU1N80 | CED05N8 | BL10N70-A

Keywords - AUIRFSL8405 MOSFET datasheet

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