AUIRFU8405 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AUIRFU8405

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 163 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 80 nS

Cossⓘ - Capacitancia de salida: 770 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.00198 Ohm

Encapsulados: TO-251

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AUIRFU8405 datasheet

 ..1. Size:292K  international rectifier
 auirfr8405 auirfu8405.pdf pdf_icon

AUIRFU8405

AUIRFR8405 AUTOMOTIVE GRADE AUIRFU8405 Features HEXFET Power MOSFET l Advanced Process Technology l New Ultra Low On-Resistance VDSS 40V l 175 C Operating Temperature RDS(on) typ. 1.65m l Fast Switching l Repetitive Avalanche Allowed up to Tjmax max. 1.98m l Lead-Free, RoHS Compliant l Automotive Qualified * ID (Silicon Limited) 211A Description Specifically designed for A

 ..2. Size:688K  infineon
 auirfr8405 auirfu8405.pdf pdf_icon

AUIRFU8405

AUIRFR8405 AUTOMOTIVE GRADE AUIRFU8405 Features VDSS 40V Advanced Process Technology RDS(on) typ. 1.65m New Ultra Low On-Resistance max. 1.98m 175 C Operating Temperature ID (Silicon Limited) 211A Fast Switching ID (Package Limited) 100A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Automotive

 5.1. Size:453K  international rectifier
 auirfr8401 auirfu8401.pdf pdf_icon

AUIRFU8405

AUIRFR8401 AUTOMOTIVE GRADE AUIRFU8401 HEXFET Power MOSFET Features VDSS 40V D Advanced Process Technology New Ultra Low On-Resistance RDS(on) typ. 3.2m 175 C Operating Temperature 4.25m G max Fast Switching ID (Silicon Limited) 100A Repetitive Avalanche Allowed up to Tjmax S Lead-Free, RoHS Compliant ID

 5.2. Size:279K  international rectifier
 auirfr8403 auirfu8403.pdf pdf_icon

AUIRFU8405

AUIRFR8403 AUIRFU8403 AUTOMOTIVE GRADE Features HEXFET Power MOSFET l Advanced Process Technology D VDSS 40V l New Ultra Low On-Resistance l 175 C Operating Temperature RDS(on) typ. 2.4m l Fast Switching l Repetitive Avalanche Allowed up to Tjmax max. 3.1m G l Lead-Free, RoHS Compliant ID (Silicon Limited) 127A l Automotive Qualified * Description S ID (Package L

MOSTRAR MÁS

Otros transistores... AUIRFSL8405, AUIRFSL8407, AUIRFSL8408, AUIRFSL8409, AUIRFU4292, AUIRFU540Z, AUIRFU8401, AUIRFU8403, SKD502T, AUIRFZ44VZSTRL, AUIRFZ44ZSTRL, AUIRFZ46NS, AUIRFZ48ZSTRL, AUIRL1404ZSTRL, AUIRL3705ZSTRL, AUIRL7732S2TR1, AUIRL7736M2TR