AUIRFU8405 MOSFET Datasheet: N-Ch, 40V, 100A. Full specification with pinout and replacement list

AUIRFU8405 Specs and Replacement

Type Designator: AUIRFU8405

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 163 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 770 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00198 Ohm

Package: TO-251

AUIRFU8405 substitution

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AUIRFU8405 datasheet

..1. Size:292K international rectifier
auirfr8405 auirfu8405.pdf pdf_icon

AUIRFR8405 AUTOMOTIVE GRADE AUIRFU8405 Features HEXFET Power MOSFET l Advanced Process Technology l New Ultra Low On-Resistance VDSS 40V l 175 C Operating Temperature RDS(on) typ. 1.65m l Fast Switching l Repetitive Avalanche Allowed up to Tjmax max. 1.98m l Lead-Free, RoHS Compliant l Automotive Qualified * ID (Silicon Limited) 211A Description Specifically designed for A... See More ⇒

..2. Size:688K infineon
auirfr8405 auirfu8405.pdf pdf_icon

AUIRFR8405 AUTOMOTIVE GRADE AUIRFU8405 Features VDSS 40V Advanced Process Technology RDS(on) typ. 1.65m New Ultra Low On-Resistance max. 1.98m 175 C Operating Temperature ID (Silicon Limited) 211A Fast Switching ID (Package Limited) 100A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Automotive ... See More ⇒

5.1. Size:453K international rectifier
auirfr8401 auirfu8401.pdf pdf_icon

AUIRFR8401 AUTOMOTIVE GRADE AUIRFU8401 HEXFET Power MOSFET Features VDSS 40V D Advanced Process Technology New Ultra Low On-Resistance RDS(on) typ. 3.2m 175 C Operating Temperature 4.25m G max Fast Switching ID (Silicon Limited) 100A Repetitive Avalanche Allowed up to Tjmax S Lead-Free, RoHS Compliant ID... See More ⇒

5.2. Size:279K international rectifier
auirfr8403 auirfu8403.pdf pdf_icon

AUIRFR8403 AUIRFU8403 AUTOMOTIVE GRADE Features HEXFET Power MOSFET l Advanced Process Technology D VDSS 40V l New Ultra Low On-Resistance l 175 C Operating Temperature RDS(on) typ. 2.4m l Fast Switching l Repetitive Avalanche Allowed up to Tjmax max. 3.1m G l Lead-Free, RoHS Compliant ID (Silicon Limited) 127A l Automotive Qualified * Description S ID (Package L... See More ⇒