AUIRL7736M2TR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AUIRL7736M2TR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 22 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 210 nS
   Cossⓘ - Capacitancia de salida: 960 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm
   Paquete / Cubierta: DIRECTFET

Búsqueda de reemplazo de MOSFET AUIRL7736M2TR

AUIRL7736M2TR Datasheet (PDF)

..1. Size:230K international rectifier
auirl7736m2tr.pdf

PD - 97656AUTOMOTIVE GRADEAUIRL7736M2TRAUIRL7736M2TR1DirectFET Power MOSFET Logic LevelV(BR)DSS40V Advanced Process Technology Optimized for Automotive DC-DC, Motor Drive andRDS(on) typ.2.2m other Heavy Load Applicationsmax. 3.0m Exceptionally Small Footprint and Low Profile High Power DensityID (Silicon Limited)112A Low Parasitic

..2. Size:434K infineon
auirl7736m2tr.pdf

AUTOMOTIVE GRADE AUIRL7736M2TR Automotive DirectFET Power MOSFET Logic LevelV(BR)DSS 40V Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 2.2m other Heavy Load Applications max. 3.0m Exceptionally Small Footprint and Low Profile ID (Silicon Limited) 112A High Power Density Qg (typical) 52nC

6.1. Size:216K international rectifier
auirl7732s2tr1.pdf

PD - 97635AAUTOMOTIVE GRADEAUIRL7732S2TRAUIRL7732S2TR1DirectFET Power MOSFET Logic LevelV(BR)DSS40V Advanced Process Technology Optimized for Automotive DC-DC, Motor Drive and RDS(on) typ.5.0m other Heavy Load Applicationsmax. 6.6m Exceptionally Small Footprint and Low ProfileID (Silicon Limited) High Power Density 58A Low Parasitic Pa

6.2. Size:426K infineon
auirl7732s2tr.pdf

AUTOMOTIVE GRADE AUIRL7732S2TR Automotive DirectFET Power MOSFET Logic LevelV(BR)DSS 40V Advanced Process Technology Optimized for Automotive DC-DC, Motor Drive and other Heavy RDS(on) typ. 5.0m Load Applicationsmax. 6.6m Exceptionally Small Footprint and Low Profile ID (Silicon Limited) 58A High Power Density Qg (typical) 22nC Low

7.1. Size:228K international rectifier
auirl7766m2tr.pdf

PD - 97648AUIRL7766M2TRAUTOMOTIVE GRADEAUIRL7766M2TR1 Automotive DirectFET Power MOSFET V(BR)DSS100V Advanced Process Technology Optimized for Automotive DC-DC andRDS(on) typ.8.0mother Heavy Load Applicationsmax. Logic Level Gate Drive 10m Exceptionally Small Footprint and Low ProfileID (Silicon Limited)51A High Power DensityQg 44nC

7.2. Size:434K infineon
auirl7766m2tr.pdf

AUTOMOTIVE GRADE AUIRL7766M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 100V Optimized for Automotive DC-DC and other Heavy Load Applications RDS(on) typ. 8.0m Logic Level Gate Drive max. 10m Exceptionally Small Footprint and Low Profile ID (Silicon Limited) 51A High Power Density Qg (typical) 44nC L

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: