AUIRLL024Z Todos los transistores

 

AUIRLL024Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AUIRLL024Z
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 33 nS
   Cossⓘ - Capacitancia de salida: 66 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
   Paquete / Cubierta: SOT-223
 

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AUIRLL024Z Datasheet (PDF)

 ..1. Size:228K  international rectifier
 auirll024z.pdf pdf_icon

AUIRLL024Z

PD - 97762AUTOMOTIVE GRADEAUIRLL024ZHEXFET Power MOSFETFeatures Advanced Process TechnologyDV(BR)DSS55V Ultra Low On-Resistance 150C Operating TemperatureRDS(on) typ.48m Fast SwitchingG max. 60m Repetitive Avalanche Allowed up toTjmax SID5.0A Lead-Free, RoHS Compliant Automotive Qualified *DescriptionDSpecifically de

 ..2. Size:674K  infineon
 auirll024z.pdf pdf_icon

AUIRLL024Z

AUTOMOTIVE GRADE AUIRLL024Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 55V Ultra Low On-Resistance RDS(on) typ. Logic Level Gate Drive 48m 150C Operating Temperature max. 60m Fast Switching ID 5.0A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Des

 5.1. Size:198K  international rectifier
 auirll024n.pdf pdf_icon

AUIRLL024Z

AUTOMOTIVE GRADEAUIRLL024NFeatures HEXFET Power MOSFET Advanced Planar TechnologyD Low On-ResistanceV(BR)DSS 55V Logic Level Gate Drive Dynamic dV/dT RatingRDS(on) max.0.065 150C Operating TemperatureG Fast Switching Fully Avalanche Rated SID 3.1A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *DDescription

 7.1. Size:548K  international rectifier
 auirll014n.pdf pdf_icon

AUIRLL024Z

AUTOMOTIVE GRADE AUIRLL014N HEXFET Power MOSFET Features VDSS Advanced Planar Technology 55V Low On-Resistance RDS(on) max. Logic Level Gate Drive 0.14 Dynamic dv/dt Rating ID 150C Operating Temperature 2.0A Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Compliant

MOSTRAR MÁS

Otros transistores... AUIRFZ44ZSTRL , AUIRFZ46NS , AUIRFZ48ZSTRL , AUIRL1404ZSTRL , AUIRL3705ZSTRL , AUIRL7732S2TR1 , AUIRL7736M2TR , AUIRL7766M2TR , IRLB4132 , AUIRLR024NTR , AUIRLR2703TR , AUIRLR2905TR , AUIRLR2905ZTR , AUIRLR3410TRL , AUIRLR3705ZTR , AUIRLS3114Z , AUIRLSL4030 .

History: PHD9NQ20T | LNC06R230 | FHU2N60A

 

 
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