Справочник MOSFET. AUIRLL024Z

 

AUIRLL024Z MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AUIRLL024Z
   Маркировка: AUL024Z
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 7 nC
   trⓘ - Время нарастания: 33 ns
   Cossⓘ - Выходная емкость: 66 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.06 Ohm
   Тип корпуса: SOT-223

 Аналог (замена) для AUIRLL024Z

 

 

AUIRLL024Z Datasheet (PDF)

 ..1. Size:228K  international rectifier
 auirll024z.pdf

AUIRLL024Z AUIRLL024Z

PD - 97762AUTOMOTIVE GRADEAUIRLL024ZHEXFET Power MOSFETFeatures Advanced Process TechnologyDV(BR)DSS55V Ultra Low On-Resistance 150C Operating TemperatureRDS(on) typ.48m Fast SwitchingG max. 60m Repetitive Avalanche Allowed up toTjmax SID5.0A Lead-Free, RoHS Compliant Automotive Qualified *DescriptionDSpecifically de

 ..2. Size:674K  infineon
 auirll024z.pdf

AUIRLL024Z AUIRLL024Z

AUTOMOTIVE GRADE AUIRLL024Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 55V Ultra Low On-Resistance RDS(on) typ. Logic Level Gate Drive 48m 150C Operating Temperature max. 60m Fast Switching ID 5.0A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Des

 5.1. Size:198K  international rectifier
 auirll024n.pdf

AUIRLL024Z AUIRLL024Z

AUTOMOTIVE GRADEAUIRLL024NFeatures HEXFET Power MOSFET Advanced Planar TechnologyD Low On-ResistanceV(BR)DSS 55V Logic Level Gate Drive Dynamic dV/dT RatingRDS(on) max.0.065 150C Operating TemperatureG Fast Switching Fully Avalanche Rated SID 3.1A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *DDescription

 7.1. Size:548K  international rectifier
 auirll014n.pdf

AUIRLL024Z AUIRLL024Z

AUTOMOTIVE GRADE AUIRLL014N HEXFET Power MOSFET Features VDSS Advanced Planar Technology 55V Low On-Resistance RDS(on) max. Logic Level Gate Drive 0.14 Dynamic dv/dt Rating ID 150C Operating Temperature 2.0A Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Compliant

 8.1. Size:246K  international rectifier
 auirll2705.pdf

AUIRLL024Z AUIRLL024Z

AUTOMOTIVE GRADEAUIRLL2705FeaturesHEXFET Power MOSFETl Advanced Planar TechnologyDl Low On-Resistance V(BR)DSS55Vl Logic Level Gate DriveRDS(on) max.l Dynamic dv/dt Rating 0.04Gl 150C Operating TemperatureSID3.8Al Fast Switchingl Fully Avalanche Ratedl Repetitive Avalanche Allowed up toTjmaxl Lead-Free, RoHS Compliant Dl Automotive Qualified*S

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History: PMV32UP

 

 
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