AUIRLR024NTR Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AUIRLR024NTR  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 45 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 17 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 74 nS

Cossⓘ - Capacitancia de salida: 130 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm

Encapsulados: TO-252

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AUIRLR024NTR datasheet

 ..1. Size:312K  international rectifier
 auirlr024ntr.pdf pdf_icon

AUIRLR024NTR

PD- 96348 AUTOMOTIVE GRADE AUIRLR024N AUIRLU024N Features Advanced Planar Technology HEXFET Power MOSFET Low On-Resistance D Logic-Level Gate Drive V(BR)DSS 55V Dynamic dV/dT Rating 175 C Operating Temperature RDS(on) max. 0.065 Fast Switching G Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax S ID 17A Lead-Free, RoHS Compliant Automotive Qual

 4.1. Size:490K  international rectifier
 auirlr024n auirlu024n.pdf pdf_icon

AUIRLR024NTR

AUIRLR024N AUTOMOTIVE GRADE AUIRLU024N Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance VDSS 55V Logic-Level Gate Drive RDS(on) max. 0.065 Dynamic dv/dt Rating 175 C Operating Temperature ID 17A Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Com

 5.1. Size:717K  infineon
 auirlr024z auirlu024z.pdf pdf_icon

AUIRLR024NTR

AUIRLR024Z AUTOMOTIVE GRADE AUIRLU024Z Features HEXFET Power MOSFET Logic Level VDSS 55V Advanced Process Technology Ultra Low On-Resistance RDS(on) typ. 46m 175 C Operating Temperature Fast Switching max. 58m Repetitive Avalanche Allowed up to Tjmax ID 16A Lead-Free, RoHS Compliant Automotive Qualified * D D De

 7.1. Size:203K  international rectifier
 auirlr014n.pdf pdf_icon

AUIRLR024NTR

AUTOMOTIVE GRADE PD - 97740 AUIRLR014N Advanced Planar Technology Logic-Level Gate Drive HEXFET Power MOSFET Low On-Resistance D Dynamic dV/dT Rating V(BR)DSS 55V 175 C Operating Temperature Fast Switching RDS(on) max. 0.14 G Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax ID 10A S Lead-Free, RoHS Compliant Auto

MOSTRAR MÁS

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