AUIRLR024NTR MOSFET. Datasheet pdf. Equivalent
Type Designator: AUIRLR024NTR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 45 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 16 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V
Maximum Drain Current |Id|: 17 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 15 nC
Rise Time (tr): 74 nS
Drain-Source Capacitance (Cd): 130 pF
Maximum Drain-Source On-State Resistance (Rds): 0.065 Ohm
Package: TO-252
AUIRLR024NTR Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AUIRLR024NTR Datasheet (PDF)
1.1. auirlr024ntr.pdf 
Size:312K _international_rectifier
PD- 96348 AUTOMOTIVE GRADE AUIRLR024N AUIRLU024N Features Advanced Planar Technology HEXFET® Power MOSFET Low On-Resistance D Logic-Level Gate Drive V(BR)DSS 55V Dynamic dV/dT Rating 175°C Operating Temperature RDS(on) max. 0.065Ω Fast Switching G Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax S ID 17A Lead-Free, RoHS Compliant Automotive Qual
4.1. auirlr3410trl.pdf Size:246K _international_rectifier
PD - 97491 AUTOMOTIVE GRADE AUIRLR3410 Features Advanced Planar Technology HEXFET® Power MOSFET Low On-Resistance Dynamic dV/dT Rating D V(BR)DSS 100V 175°C Operating Temperature Fast Switching RDS(on) max. 105mΩ G Fully Avalanche Rated Repetitive Avalanche Allowed up to ID 17A S Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifica
4.2. auirlr2905ztr.pdf Size:273K _international_rectifier
PD - 97583 AUTOMOTIVE GRADE AUIRLR2905Z Features HEXFET® Power MOSFET ● Logic Level ● Advanced Process Technology D V(BR)DSS 55V ● Ultra Low On-Resistance ● 175°C Operating Temperature RDS(on) max. 13.5mΩ ● Fast Switching G ID (Silicon Limited) 60A ● Repetitive Avalanche Allowed up to Tjmax ● Lead-Free, RoHS Compliant S ID (Package Limited) 42A ● Automot
4.3. auirlr2703tr.pdf Size:276K _international_rectifier
PD - 97620 AUTOMOTIVE GRADE AUIRLR2703 • Advanced Planar Technology HEXFET® Power MOSFET • Logic-Level Gate Drive • Low On-Resistance D • Dynamic dV/dT Rating V(BR)DSS 30V • 175°C Operating Temperature RDS(on) max. 45m Ω • Fast Switching G ID (Silicon Limited) • Fully Avalanche Rated 23A • Repetitive Avalanche Allowed up to Tjmax S ID (Package Limited) 20
4.4. auirlr2905tr.pdf Size:238K _international_rectifier
AUIRLR2905 AUTOMOTIVE GRADE AUIRLU2905 • Advanced Planar Technology HEXFET® Power MOSFET • Logic-Level Gate Drive D V(BR)DSS • Low On-Resistance 55V • Dynamic dV/dT Rating RDS(on) max. 27m • 175°C Operating Temperature G • Fast Switching ID 42A S • Fully Avalanche Rated • Repetitive Avalanche Allowed up to Tjmax D • Lead-Free, RoHS Compliant • Autom
4.5. auirlr3705ztr.pdf Size:287K _international_rectifier
PD - 97611 AUTOMOTIVE GRADE AUIRLR3705Z Features HEXFET® Power MOSFET ● Logic Level ● Advanced Process Technology D V(BR)DSS 55V ● Ultra Low On-Resistance ● 175°C Operating Temperature RDS(on) max. 8.0mΩ ● Fast Switching G ID (Silicon Limited) 89A ● Repetitive Avalanche Allowed up to Tjmax ● Lead-Free, RoHS Compliant S ID (Package Limited) 42A ● Automotiv
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