IPB110N20N3LF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPB110N20N3LF
Código: 110N20LF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 250 W
Voltaje máximo drenador - fuente |Vds|: 200 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 88 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.2 V
Carga de la puerta (Qg): 76 nC
Tiempo de subida (tr): 70 nS
Conductancia de drenaje-sustrato (Cd): 390 pF
Resistencia entre drenaje y fuente RDS(on): 0.011 Ohm
Paquete / Cubierta: D2PAK TO-263
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IPB110N20N3LF Datasheet (PDF)
ipb110n20n3lf.pdf
IPB110N20N3LFMOSFETDPAKOptiMOSTM 3 Linear FET, 200 VFeatures Ideal for hot-swap and e-fuse applications Very low on-resistance RDS(on) Wide safe operating area SOA N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21Drain
ipb110n20n3lf.pdf
Isc N-Channel MOSFET Transistor IPB110N20N3LFFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source
ipb110n06lg.pdf
IPB110N06L G IPP110N06L GOptiMOS Power-TransistorProduct SummaryFeaturesV 60 VDS For fast switching converters and sync. rectificationR 11mDS(on),max SMD version N-channel enhancement - logic levelI 78 AD 175 C operating temperature Avalanche rated Pb-free lead plating, RoHS compliantType IPB110N06L G IPP110N06L GType Package MarkingIPB1
ipb110n06lg ipp110n06lg.pdf
IPB110N06L G IPP110N06L G Power-TransistorProduct SummaryFeaturesV D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?>R 11 m , ?> =1G ,' E5AB9?>P ( 381>>581>35=5>C
ipb110p06lm.pdf
IPB110P06LMMOSFETDPAKOptiMOSTM Power Transistor, -60 VFeaturestab P-Channel Very low on-resistance R @ V =4.5 VDS(on) GS 100% avalanche tested Logic Level Enhancement mode Pb-free lead plating; RoHS compliant1 Halogen-free according to IEC61249-2-213Product validationFully qualified according to JEDEC for Industrial ApplicationsDraint
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
