IPB26CN10N Todos los transistores

 ..1. Size:258K  inchange semiconductor
 ipb26cn10n.pdf

Isc N-Channel MOSFET Transistor IPB26CN10N FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo

 0.1. Size:1032K  infineon
 ipb26cn10ng ipd25cn10ng ipi26cn10ng ipp26cn10ng.pdf

IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G OptiMOS 2 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max (TO252) 25 mW Excellent gate charge x R product (FOM) DS(on) ID 35 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1)

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 ipb26cn10n-g ipd25cn10n-g ipi26cn10n-g ipp26cn10n-g ipu25cn10n-g.pdf

IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G IPU25CN10N G OptiMOS 2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 25 m DS(on),max (TO252) Excellent gate charge x R product (FOM) DS(on) I 35 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified accordi

 9.1. Size:296K  infineon
 ipb260n06n3-g ipp260n06n3-g.pdf

Type IPB260N06N3 G IPP260N06N3 G OptiMOS 3 Power-Transistor Product Summary Features V 60 V DS Ideal for high frequency switching and sync. rec. R 26 m DS(on),max Optimized technology for DC/DC converters I 27 A D Excellent gate charge x R product (FOM) DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualifie