IPB26CN10N Specs and Replacement

Type Designator: IPB26CN10N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 71 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 232 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm

Package: D2PAK TO-263

IPB26CN10N substitution

- MOSFET ⓘ Cross-Reference Search

 

IPB26CN10N datasheet

 ..1. Size:258K  inchange semiconductor
 ipb26cn10n.pdf pdf_icon

IPB26CN10N

Isc N-Channel MOSFET Transistor IPB26CN10N FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo... See More ⇒

 0.1. Size:1032K  infineon
 ipb26cn10ng ipd25cn10ng ipi26cn10ng ipp26cn10ng.pdf pdf_icon

IPB26CN10N

IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G OptiMOS 2 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max (TO252) 25 mW Excellent gate charge x R product (FOM) DS(on) ID 35 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) ... See More ⇒

 0.2. Size:707K  infineon
 ipb26cn10n-g ipd25cn10n-g ipi26cn10n-g ipp26cn10n-g ipu25cn10n-g.pdf pdf_icon

IPB26CN10N

IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G IPU25CN10N G OptiMOS 2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 25 m DS(on),max (TO252) Excellent gate charge x R product (FOM) DS(on) I 35 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified accordi... See More ⇒

 9.1. Size:296K  infineon
 ipb260n06n3-g ipp260n06n3-g.pdf pdf_icon

IPB26CN10N

Type IPB260N06N3 G IPP260N06N3 G OptiMOS 3 Power-Transistor Product Summary Features V 60 V DS Ideal for high frequency switching and sync. rec. R 26 m DS(on),max Optimized technology for DC/DC converters I 27 A D Excellent gate charge x R product (FOM) DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualifie... See More ⇒

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Detailed specifications: IPB065N10N3, IPB067N08N3, IPB081N06L3, IPB083N10N3, IPB083N15N5LF, IPB097N08N3, IPB107N20N3, IPB110N20N3LF, 50N06, IPB34CN10N, IPB530N15N3, IPB60R040C7, IPB60R060C7, IPB60R060P7, IPB60R080P7, IPB60R099C7, IPB60R099P7

Keywords - IPB26CN10N MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.