IPB60R600P6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPB60R600P6
Código: 6R600P6
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 63 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 7.3 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Carga de la puerta (Qg): 12 nC
Tiempo de subida (tr): 7 nS
Conductancia de drenaje-sustrato (Cd): 28 pF
Resistencia entre drenaje y fuente RDS(on): 0.6 Ohm
Paquete / Cubierta: D2PAK TO-263
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IPB60R600P6 Datasheet (PDF)
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ipb60r600p6 ipp60r600p6 ipd60r600p6 ipa60r600p6.pdf
IPB60R600P6, IPP60R600P6, IPD60R600P6,IPA60R600P6MOSFETDPAK PG-TO 220 DPAK600V CoolMOS P6 Power Transistortab tabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and22pioneered by Infineon Technologies. CoolMOS P6 series combines the 1 133experience of the leading SJ MOSFET suppli
ipb60r600p6.pdf
Isc N-Channel MOSFET Transistor IPB60R600P6FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V
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ipb60r600cp.pdf
IPB60R600CPCoolMOSTM Power TransistorProduct SummaryFeaturesV @ Tj,max 650 VDS Lowest figure-of-merit RON x QgR @ Tj =25C 0.6DS(on),max Ultra low gate chargeQ 21 nCg,typ Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applicationsPG-TO263 Pb-free lead plating; RoHS compliantCoolMOS CP is desi
ipb60r600c6.pdf
Isc N-Channel MOSFET Transistor IPB60R600C6FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V
ipb60r600cp.pdf
Isc N-Channel MOSFET Transistor IPB60R600CPFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V
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