IPB60R600P6 - описание и поиск аналогов

 ..1. Size:2849K  infineon
 ipb60r600p6 ipp60r600p6 ipa60r600p6 ipd60r600p6.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R600P6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPB60R600P6, IPP60R600P6, IPA60R600P6, IPD60R600P6 D PAK TO-220 TO-220 FP 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFET

 ..2. Size:2519K  infineon
 ipb60r600p6 ipp60r600p6 ipd60r600p6 ipa60r600p6.pdf 

IPB60R600P6, IPP60R600P6, IPD60R600P6, IPA60R600P6 MOSFET D PAK PG-TO 220 DPAK 600V CoolMOS P6 Power Transistor tab tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 2 pioneered by Infineon Technologies. CoolMOS P6 series combines the 1 1 3 3 experience of the leading SJ MOSFET suppli

 ..3. Size:258K  inchange semiconductor
 ipb60r600p6.pdf 

Isc N-Channel MOSFET Transistor IPB60R600P6 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

 5.1. Size:1224K  infineon
 ipd60r600c6 ipb60r600c6 ipp60r600c6 ipa60r600c6.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R600C6 Data Sheet Rev. 2.5 Final Power Management & Multimarket 600V C IMOS C6 P wer Transist r IPD60R600C6, IPB60R600C6 IPP60R600C6, IPA60R600C6 1 Descripti n CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according to the super

 5.2. Size:1051K  infineon
 ipb60r600c6.pdf 

MOSFET + =L9D - PA

 5.3. Size:273K  infineon
 ipb60r600cp.pdf 

IPB60R600CP CoolMOSTM Power Transistor Product Summary Features V @ Tj,max 650 V DS Lowest figure-of-merit RON x Qg R @ Tj =25 C 0.6 DS(on),max Ultra low gate charge Q 21 nC g,typ Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications PG-TO263 Pb-free lead plating; RoHS compliant CoolMOS CP is desi

 5.4. Size:257K  inchange semiconductor
 ipb60r600c6.pdf 

Isc N-Channel MOSFET Transistor IPB60R600C6 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

 5.5. Size:257K  inchange semiconductor
 ipb60r600cp.pdf 

Isc N-Channel MOSFET Transistor IPB60R600CP FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V