IPS60R3K4CE MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPS60R3K4CE

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 29 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 2.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 9 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3.4 Ohm

Encapsulados: IPAK TO-251

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IPS60R3K4CE datasheet

 ..1. Size:1375K  infineon
ipd60r3k4ce ipu60r3k4ce ips60r3k4ce.pdf pdf_icon

IPS60R3K4CE

IPD60R3K4CE, IPU60R3K4CE, IPS60R3K4CE MOSFET DPAK IPAK IPAK SL 600V CoolMOS CE Power Transistor tab tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 1 2 3 3 price-performance optimized platform enabling to target cost sensitive a

 ..2. Size:261K  inchange semiconductor
ips60r3k4ce.pdf pdf_icon

IPS60R3K4CE

isc N-Channel MOSFET Transistor IPS60R3K4CE FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

 7.1. Size:643K  infineon
ips60r360pfd7s.pdf pdf_icon

IPS60R3K4CE

IPS60R360PFD7S MOSFET IPAK SL 600V CoolMOS PFD7 SJ Power Device tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, moto

 8.1. Size:1345K  infineon
ipd60r400ce ips60r400ce ipa60r400ce.pdf pdf_icon

IPS60R3K4CE

IPD60R400CE, IPS60R400CE, IPA60R400CE MOSFET DPAK IPAK SL PG-TO 220 FP 600V CoolMOS CE Power Transistor tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 3 price-performance optimized platform enabling to target cost sensitive applica

Otros transistores... IPB60R280P7, IPB60R330P6, IPB60R360P7, IPB60R380P6, IPB60R600P6, IPP60R360P7, IPS110N12N3, IPS12CN10L, 2SK3878, IPS60R400CE, IPS65R400CE, IPS70R1K4CE, IPS70R950CE, IPU050N03L, IPU060N03L, IPU075N03L, IPU135N03L