IPS60R3K4CE. Аналоги и основные параметры
Наименование производителя: IPS60R3K4CE
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 29 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 2.6 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 9 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 3.4 Ohm
Аналог (замена) для IPS60R3K4CE
- подборⓘ MOSFET транзистора по параметрам
IPS60R3K4CE даташит
ipd60r3k4ce ipu60r3k4ce ips60r3k4ce.pdf
IPD60R3K4CE, IPU60R3K4CE, IPS60R3K4CE MOSFET DPAK IPAK IPAK SL 600V CoolMOS CE Power Transistor tab tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 1 2 3 3 price-performance optimized platform enabling to target cost sensitive a
ips60r3k4ce.pdf
isc N-Channel MOSFET Transistor IPS60R3K4CE FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE
ips60r360pfd7s.pdf
IPS60R360PFD7S MOSFET IPAK SL 600V CoolMOS PFD7 SJ Power Device tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, moto
ipd60r400ce ips60r400ce ipa60r400ce.pdf
IPD60R400CE, IPS60R400CE, IPA60R400CE MOSFET DPAK IPAK SL PG-TO 220 FP 600V CoolMOS CE Power Transistor tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 3 price-performance optimized platform enabling to target cost sensitive applica
Другие IGBT... IPB60R280P7, IPB60R330P6, IPB60R360P7, IPB60R380P6, IPB60R600P6, IPP60R360P7, IPS110N12N3, IPS12CN10L, 2SK3878, IPS60R400CE, IPS65R400CE, IPS70R1K4CE, IPS70R950CE, IPU050N03L, IPU060N03L, IPU075N03L, IPU135N03L
History: IPB110N06LG
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Список транзисторов
Обновления
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