IPS60R400CE Todos los transistores

 

IPS60R400CE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPS60R400CE
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 112 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 14.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 46 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
   Paquete / Cubierta: IPAK TO-251
 

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IPS60R400CE Datasheet (PDF)

 ..1. Size:1345K  infineon
 ipd60r400ce ips60r400ce ipa60r400ce.pdf pdf_icon

IPS60R400CE

IPD60R400CE, IPS60R400CE, IPA60R400CEMOSFETDPAK IPAK SL PG-TO 220 FP600V CoolMOS CE Power TransistortabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE is a 13price-performance optimized platform enabling to target cost sensitiveapplica

 ..2. Size:261K  inchange semiconductor
 ips60r400ce.pdf pdf_icon

IPS60R400CE

isc N-Channel MOSFET Transistor IPS60R400CEFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

 8.1. Size:1028K  infineon
 ips60r280pfd7s.pdf pdf_icon

IPS60R400CE

IPS60R280PFD7SMOSFETIPAK SL600V CoolMOS PFD7 SJ Power DevicetabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,moto

 8.2. Size:639K  infineon
 ips60r1k0pfd7s.pdf pdf_icon

IPS60R400CE

IPS60R1K0PFD7SMOSFETIPAK SL600V CoolMOS PFD7 SJ Power DevicetabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,moto

MOSTRAR MÁS

Otros transistores... IPB60R330P6 , IPB60R360P7 , IPB60R380P6 , IPB60R600P6 , IPP60R360P7 , IPS110N12N3 , IPS12CN10L , IPS60R3K4CE , 12N60 , IPS65R400CE , IPS70R1K4CE , IPS70R950CE , IPU050N03L , IPU060N03L , IPU075N03L , IPU135N03L , IPU60R3K4CE .

History: IPS60R1K0PFD7S | SQP120N10-3M8

 

 
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