IPS60R400CE MOSFET. Datasheet pdf. Equivalent
Type Designator: IPS60R400CE
Marking Code: 60S400CE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 112 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
Maximum Drain Current |Id|: 14.7 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 32 nC
Rise Time (tr): 9 nS
Drain-Source Capacitance (Cd): 46 pF
Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm
Package: IPAK, TO-251
IPS60R400CE Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPS60R400CE Datasheet (PDF)
0.1. ipd60r400ce ips60r400ce ipa60r400ce.pdf 
Size:1345K _infineon
IPD60R400CE, IPS60R400CE, IPA60R400CE MOSFET DPAK IPAK SL PG-TO 220 FP 600V CoolMOSª CE Power Transistor tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS™ CE is a 1 3 price-performance optimized platform enabling to target cost sensitive applica
0.2. ips60r400ce.pdf Size:261K _inchange_semiconductor
isc N-Channel MOSFET Transistor IPS60R400CE ·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·DC-DC converters ·Motor control ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE
8.1. ipd60r3k4ce ipu60r3k4ce ips60r3k4ce.pdf Size:1375K _infineon
IPD60R3K4CE, IPU60R3K4CE, IPS60R3K4CE MOSFET DPAK IPAK IPAK SL 600V CoolMOSª CE Power Transistor tab tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS™ CE is a 1 1 2 3 3 price-performance optimized platform enabling to target cost sensitive a
8.2. ips60r3k4ce.pdf Size:261K _inchange_semiconductor
isc N-Channel MOSFET Transistor IPS60R3K4CE ·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·DC-DC converters ·Motor control ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE
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