IPS70R1K4CE MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPS70R1K4CE
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 53 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 5.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5.9 nS
Cossⓘ - Capacitancia de salida: 18 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
Búsqueda de reemplazo de IPS70R1K4CE MOSFET
- Selecciónⓘ de transistores por parámetros
IPS70R1K4CE datasheet
ipd70r1k4ce ips70r1k4ce.pdf
IPD70R1K4CE, IPS70R1K4CE MOSFET DPAK IPAK SL 700V CoolMOS CE Power Transistor tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 3 price-performance optimized platform enabling to target cost sensitive applications in Consumer and Ligh
ips70r1k4ce.pdf
isc N-Channel MOSFET Transistor IPS70R1K4CE FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE
ips70r1k4p7s.pdf
IPS70R1K4P7S MOSFET IPAK SL 700V CoolMOS P7 Power Transistor tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting,
ips70r360p7s.pdf
IPS70R360P7S MOSFET IPAK SL 700V CoolMOS P7 Power Transistor tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting,
Otros transistores... IPB60R380P6, IPB60R600P6, IPP60R360P7, IPS110N12N3, IPS12CN10L, IPS60R3K4CE, IPS60R400CE, IPS65R400CE, IRF9540N, IPS70R950CE, IPU050N03L, IPU060N03L, IPU075N03L, IPU135N03L, IPU60R3K4CE, IRF135S203, IRFS4510
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