IPS70R1K4CE Todos los transistores

 

IPS70R1K4CE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPS70R1K4CE
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 53 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5.9 nS
   Cossⓘ - Capacitancia de salida: 18 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
   Paquete / Cubierta: IPAK TO-251
     - Selección de transistores por parámetros

 

IPS70R1K4CE Datasheet (PDF)

 ..1. Size:1056K  infineon
ipd70r1k4ce ips70r1k4ce.pdf pdf_icon

IPS70R1K4CE

IPD70R1K4CE, IPS70R1K4CEMOSFETDPAK IPAK SL700V CoolMOS CE Power TransistortabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE is a 13price-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Ligh

 ..2. Size:261K  inchange semiconductor
ips70r1k4ce.pdf pdf_icon

IPS70R1K4CE

isc N-Channel MOSFET Transistor IPS70R1K4CEFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

 5.1. Size:1168K  infineon
ips70r1k4p7s.pdf pdf_icon

IPS70R1K4CE

IPS70R1K4P7SMOSFETIPAK SL700V CoolMOS P7 Power TransistortabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting,

 8.1. Size:926K  infineon
ips70r360p7s.pdf pdf_icon

IPS70R1K4CE

IPS70R360P7SMOSFETIPAK SL700V CoolMOS P7 Power TransistortabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting,

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History: ZVN3310ASTZ | 24NM60G-TQ2-T | SSM4502GM | FPF1C2P5BF07A | FQD20N06L | SGSP341 | AOK160A60FDL

 

 
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