IPS70R1K4CE Specs and Replacement

Type Designator: IPS70R1K4CE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 53 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.9 nS

Cossⓘ - Output Capacitance: 18 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: IPAK TO-251

IPS70R1K4CE substitution

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IPS70R1K4CE datasheet

 ..1. Size:1056K  infineon
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IPS70R1K4CE

IPD70R1K4CE, IPS70R1K4CE MOSFET DPAK IPAK SL 700V CoolMOS CE Power Transistor tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 3 price-performance optimized platform enabling to target cost sensitive applications in Consumer and Ligh... See More ⇒

 ..2. Size:261K  inchange semiconductor
ips70r1k4ce.pdf pdf_icon

IPS70R1K4CE

isc N-Channel MOSFET Transistor IPS70R1K4CE FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE... See More ⇒

 5.1. Size:1168K  infineon
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IPS70R1K4CE

IPS70R1K4P7S MOSFET IPAK SL 700V CoolMOS P7 Power Transistor tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting,... See More ⇒

 8.1. Size:926K  infineon
ips70r360p7s.pdf pdf_icon

IPS70R1K4CE

IPS70R360P7S MOSFET IPAK SL 700V CoolMOS P7 Power Transistor tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting,... See More ⇒

Detailed specifications: IPB60R380P6, IPB60R600P6, IPP60R360P7, IPS110N12N3, IPS12CN10L, IPS60R3K4CE, IPS60R400CE, IPS65R400CE, IRF9540N, IPS70R950CE, IPU050N03L, IPU060N03L, IPU075N03L, IPU135N03L, IPU60R3K4CE, IRF135S203, IRFS4510

Keywords - IPS70R1K4CE MOSFET specs

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 IPS70R1K4CE replacement

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