IRF135S203 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

StrongIRFET IRF135B203 IRF135S203 Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications D VDSS 135V Battery powered circuits Half-bridge and full-bridge topologies RDS(on) typ. 6.7m Synchronous rectifier applications G max 8.4m Resonant mode power supplies S OR-ing

isc N-Channel MOSFET Transistor IRF135S203FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

StrongIRFET IRF135SA204 Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications D VDSS 135V Battery powered circuits Half-bridge and full-bridge topologies RDS(on) typ. 4.7m Synchronous rectifier applications G max 5.9m Resonant mode power supplies S OR-ing and redunda

isc N-Channel MOSFET Transistor IRF135B203IIRF135B203FEATURESStatic drain-source on-resistance:RDS(on) 8.4mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved Gate, Avalanche and Dynamic dV/dt RuggednessABSOLUTE MAXIMUM RATINGS(T =25)aS

PD - 95690IRF1310NPbF Lead-Freewww.irf.com8/19/04IRF1310NPbF2 www.irf.comIRF1310NPbFwww.irf.com 3IRF1310NPbF4 www.irf.comIRF1310NPbFwww.irf.com 5IRF1310NPbF6 www.irf.comIRF1310NPbFwww.irf.com 7IRF1310NPbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)3.5

PD - 97483AUIRF1324SAUTOMOTIVE GRADEAUIRF1324LHEXFET Power MOSFETFeatures Advanced Process Technology DVDSS24V Ultra Low On-Resistance Dynamic dV/dT RatingRDS(on) typ.1.3m 175C Operating TemperatureGID (Silicon Limited) Fast Switching 340A Repetitive Avalanche Allowed up to TjmaxID (Package Limited)195A Lead-Free, RoHS Compliant S Automotive Qua

PD - 97263BIRF1324S-7PPbFHEXFET Power MOSFETDApplicationsVDSS24Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.0.8ml Uninterruptible Power Supply max. 1.0ml High Speed Power Switching GID (Silicon Limited)429Al Hard Switched and High Frequency CircuitsID (Package Limited)240ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtD

PD- 95322IRF1310NS/LPbF Lead-Freewww.irf.com 105/27/04IRF1310NS/LPbF2 www.irf.comIRF1310NS/LPbFwww.irf.com 3IRF1310NS/LPbF4 www.irf.comIRF1310NS/LPbFwww.irf.com 5IRF1310NS/LPbF6 www.irf.comIRF1310NS/LPbFwww.irf.com 7IRF1310NS/LPbFD2Pak Package OutlineD2Pak Part Marking InformationTHIS IS AN IRF530S WITHPART NUMBERLOT CODE 8024INTERNATIONAL

PD- 95322IRF1310NS/LPbF Lead-Freewww.irf.com 105/27/04IRF1310NS/LPbF2 www.irf.comIRF1310NS/LPbFwww.irf.com 3IRF1310NS/LPbF4 www.irf.comIRF1310NS/LPbFwww.irf.com 5IRF1310NS/LPbF6 www.irf.comIRF1310NS/LPbFwww.irf.com 7IRF1310NS/LPbFD2Pak Package OutlineD2Pak Part Marking InformationTHIS IS AN IRF530S WITHPART NUMBERLOT CODE 8024INTERNATIONAL

PD - 9.1221IRF1310SHEXFET Power MOSFETAdvanced Process TechnologyUltra Low On-ResistanceSurface Mount VDSS = 100VAvailable in Tape & ReelDynamic dv/dt RatingRDS(on) = 0.04Repetitive Avalanche Rated175C Operating TemperatureID = 41ADescriptionFourth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve the lowest possi

PD- 94504IRF1312IRF1312SIRF1312LHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters80V 10m 95Al Motor Controll Uninterrutible Power SuppliesBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeTO-220AB D2Pak TO-262App. Note AN1001)I

PD - 91514BIRF1310NS/LHEXFET Power MOSFET Advanced Process Technology DVDSS =100V Surface Mount (IRF1310NS) Low-profile through-hole (IRF1310NL) 175C Operating TemperatureRDS(on) = 0.036G Fast Switching Fully Avalanche RatedID = 42ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely

PD - 91504AIRF1310NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.036 Fully Avalanche RatedGDescription ID = 42ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbene

PD - 96199AIRF1324PbFHEXFET Power MOSFETApplicationsDVDSS24Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.2ml Uninterruptible Power Supplyl High Speed Power Switching max. 1.5ml Hard Switched and High Frequency CircuitsGID (Silicon Limited)353AID (Package Limited)S 195A Benefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggedness

PD - 94591AUTOMOTIVE MOSFETIRF1302BenefitsHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 20V Dynamic dv/dt Rating 175C Operating Temperature Fast SwitchingRDS(on) = 4.0mG Repetitive Avalanche Allowed up to TjmaxID = 180A SDescriptionSpecifically designed for Automotive applications, this Stripe Planar

PD - 97676AAUTOMOTIVE GRADEAUIRF1324WLHEXFET Power MOSFETFeaturesl Advanced Process TechnologyDV(BR)DSS24Vl Ultra Low On-ResistanceRDS(on) typ.1.16ml 50% Lower Lead Resistance max. 1.30ml 175C Operating TemperatureGl Fast SwitchingID (Silicon Limited)382A l Repetitive Avalanche Allowed up to TjmaxSID (Package Limited)240A l Lead-Free,

PD - 90333FIRF130REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6756HEXFETTRANSISTORS JANTXV2N6756THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542]100V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF130 100V 0.18 14AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique process

PD - 97353AIRF1324SPbFIRF1324LPbFHEXFET Power MOSFETApplicationsDVDSS24Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.3ml Uninterruptible Power Supplyl High Speed Power Switching max. 1.65ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 340AID (Package Limited) 195A SBenefitsl Improved Gate, Avalanche and Dynami

PD- 95409AIRF1312PbFIRF1312SPbFIRF1312LPbFHEXFET Power MOSFETApplicationsl High frequency DC-DC convertersVDSS RDS(on) max IDl Motor Control80V 10m 95Al Uninterrutible Power Suppliesl Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeTO-220AB D2Pak TO-26

PD - 97482AUTOMOTIVE GRADEAUIRF1324HEXFET Power MOSFETFeaturesDVDSS24V Advanced Process Technology Ultra Low On-Resistance RDS(on) typ.1.2m 175C Operating Temperature max. 1.5m Fast SwitchingG Repetitive Avalanche Allowed up to TjmaxID (Silicon Limited) 353A Lead-Free, RoHS CompliantSID (Package Limited)195A Automotive Qualified *DescriptionSpe

PD - 94520AUTOMOTIVE MOSFETIRF1302SIRF1302LBenefits Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-ResistanceD Dynamic dv/dt RatingVDSS = 20V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 4.0mGID = 174ASDescriptionSpecifically designed for Automotive applications, this St

AUIRF1324S AUTOMOTIVE GRADE AUIRF1324L HEXFET Power MOSFET Features VDSS 24V Advanced Process Technology RDS(on) typ. 1.3m Ultra Low On-Resistance max. 1.65m Dynamic dV/dT Rating 175C Operating Temperature ID (Silicon Limited) 340A Fast Switching ID (Package Limited) 195A Repetitive Avalanche Allowed up to Tjmax Lead-

AUTOMOTIVE GRADE AUIRF1324S-7P Features VDSS 24V Advanced Process Technology RDS(on) typ. 0.8m Ultra Low On-Resistance max. 175C Operating Temperature 1.0m Fast Switching ID (Silicon Limited) 429A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 240A Lead-Free, RoHS Compliant Automotive Qualified * Description

IRF130, IRF131,S E M I C O N D U C T O RIRF132, IRF13312A and 14A, 80V and 100V, 0.16 and 0.23 Ohm,October 1997 N-Channel Power MOSFETsFeatures Description 12A and 14A, 80V and 100V These are N-Channel enhancement mode silicon gatepower field effect transistors. They are advanced power rDS(ON) = 0.16 and 0.23MOSFETs designed, tested, and guaranteed to withstand a

IRF130SMD05NIRFN130SMD05MECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET FOR HIREL APPLICATIONS !VDSS 100VID(cont) 11ARDS(on) 0.19 FEATURES HERMETICALLY SEALED

IRF130SMD05DSGNMECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET7.54 (0.296)FOR HIREL0.76 (0.030)min.3.175 (0.125) 2.41 (0.095) 2.41 (0.095) Max.APPLICATIONS 0.127 (0.005)1 3VDSS 100VID(cont) 11A2RDS(on) 0.19FEATURES 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020) HERMETICALLY SEALED 0.50 (0.020)max.7.26 (0.286)

IRF130SMDMECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET FOR HIREL APPLICATIONS !VDSS 100VID(cont) 11ARDS(on) 0.19FEATURES HERMETICALLY SEALED SIMPLE DRIVE REQUIREMENTS

RoHS IRF13N50 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(14A, 500Volts)DESCRIPTION The Nell IRF13N50 are N-channel enhancement mode Dsilicon gate power field effect transistors. They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation. They are designed as an extremely efficient and reliab

SMIRF13N5030V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 13A SMIRF13N50 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 500V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.48(VGS=10V, ID=6.5A) on-state resistance, provide superi

Isc N-Channel MOSFET Transistor IRF1310NLFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 10

Isc N-Channel MOSFET Transistor IRF1310NSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

isc N-Channel MOSFET Transistor IRF1310NIIRF1310NFEATURESStatic drain-source on-resistance:RDS(on) 0.036Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1324IIRF1324FEATURESStatic drain-source on-resistance:RDS(on) 1.5mEnhancement mode:Fast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM