IRF135S203 - описание и поиск аналогов

 ..1. Size:546K  international rectifier
 irf135s203 irf135b203.pdf 

StrongIRFET IRF135B203 IRF135S203 Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications D VDSS 135V Battery powered circuits Half-bridge and full-bridge topologies RDS(on) typ. 6.7m Synchronous rectifier applications G max 8.4m Resonant mode power supplies S OR-ing

 ..2. Size:258K  inchange semiconductor
 irf135s203.pdf 

isc N-Channel MOSFET Transistor IRF135S203 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 7.1. Size:515K  infineon
 irf135sa204.pdf 

StrongIRFET IRF135SA204 Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications D VDSS 135V Battery powered circuits Half-bridge and full-bridge topologies RDS(on) typ. 4.7m Synchronous rectifier applications G max 5.9m Resonant mode power supplies S OR-ing and redunda

 8.1. Size:245K  inchange semiconductor
 irf135b203.pdf 

isc N-Channel MOSFET Transistor IRF135B203 IIRF135B203 FEATURES Static drain-source on-resistance RDS(on) 8.4m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

 9.1. Size:594K  international rectifier
 irf1310npbf.pdf 

PD - 95690 IRF1310NPbF Lead-Free www.irf.com 8/19/04 IRF1310NPbF 2 www.irf.com IRF1310NPbF www.irf.com 3 IRF1310NPbF 4 www.irf.com IRF1310NPbF www.irf.com 5 IRF1310NPbF 6 www.irf.com IRF1310NPbF www.irf.com 7 IRF1310NPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.5

 9.2. Size:472K  international rectifier
 auirf1324strl.pdf 

PD - 97483 AUIRF1324S AUTOMOTIVE GRADE AUIRF1324L HEXFET Power MOSFET Features Advanced Process Technology D VDSS 24V Ultra Low On-Resistance Dynamic dV/dT Rating RDS(on) typ. 1.3m 175 C Operating Temperature G ID (Silicon Limited) Fast Switching 340A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 195A Lead-Free, RoHS Compliant S Automotive Qua

 9.3. Size:281K  international rectifier
 irf1324s-7ppbf.pdf 

PD - 97263B IRF1324S-7PPbF HEXFET Power MOSFET D Applications VDSS 24V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 0.8m l Uninterruptible Power Supply max. 1.0m l High Speed Power Switching G ID (Silicon Limited) 429A l Hard Switched and High Frequency Circuits ID (Package Limited) 240A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D

 9.4. Size:721K  international rectifier
 irf1310nspbf.pdf 

PD- 95322 IRF1310NS/LPbF Lead-Free www.irf.com 1 05/27/04 IRF1310NS/LPbF 2 www.irf.com IRF1310NS/LPbF www.irf.com 3 IRF1310NS/LPbF 4 www.irf.com IRF1310NS/LPbF www.irf.com 5 IRF1310NS/LPbF 6 www.irf.com IRF1310NS/LPbF www.irf.com 7 IRF1310NS/LPbF D2Pak Package Outline D2Pak Part Marking Information THIS IS AN IRF530S WITH PART NUMBER LOT CODE 8024 INTERNATIONAL

 9.5. Size:721K  international rectifier
 irf1310nspbf irf1310nlpbf.pdf 

PD- 95322 IRF1310NS/LPbF Lead-Free www.irf.com 1 05/27/04 IRF1310NS/LPbF 2 www.irf.com IRF1310NS/LPbF www.irf.com 3 IRF1310NS/LPbF 4 www.irf.com IRF1310NS/LPbF www.irf.com 5 IRF1310NS/LPbF 6 www.irf.com IRF1310NS/LPbF www.irf.com 7 IRF1310NS/LPbF D2Pak Package Outline D2Pak Part Marking Information THIS IS AN IRF530S WITH PART NUMBER LOT CODE 8024 INTERNATIONAL

 9.6. Size:182K  international rectifier
 irf1310s.pdf 

PD - 9.1221 IRF1310S HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Surface Mount VDSS = 100V Available in Tape & Reel Dynamic dv/dt Rating RDS(on) = 0.04 Repetitive Avalanche Rated 175 C Operating Temperature ID = 41A Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possi

 9.7. Size:226K  international rectifier
 irf1312.pdf 

PD- 94504 IRF1312 IRF1312S IRF1312L HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 80V 10m 95A l Motor Control l Uninterrutible Power Supplies Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See TO-220AB D2Pak TO-262 App. Note AN1001) I

 9.8. Size:156K  international rectifier
 irf1310ns.pdf 

PD - 91514B IRF1310NS/L HEXFET Power MOSFET Advanced Process Technology D VDSS =100V Surface Mount (IRF1310NS) Low-profile through-hole (IRF1310NL) 175 C Operating Temperature RDS(on) = 0.036 G Fast Switching Fully Avalanche Rated ID = 42A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely

 9.9. Size:96K  international rectifier
 irf1310n.pdf 

PD - 91504A IRF1310N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 100V 175 C Operating Temperature Fast Switching RDS(on) = 0.036 Fully Avalanche Rated G Description ID = 42A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This bene

 9.10. Size:451K  international rectifier
 irf1324pbf.pdf 

PD - 96199A IRF1324PbF HEXFET Power MOSFET Applications D VDSS 24V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 1.2m l Uninterruptible Power Supply l High Speed Power Switching max. 1.5m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 353A ID (Package Limited) S 195A Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

 9.11. Size:523K  international rectifier
 irf1302.pdf 

PD - 94591 AUTOMOTIVE MOSFET IRF1302 Benefits HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 20V Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching RDS(on) = 4.0m G Repetitive Avalanche Allowed up to Tjmax ID = 180A S Description Specifically designed for Automotive applications, this Stripe Planar

 9.12. Size:240K  international rectifier
 auirf1324wl.pdf 

PD - 97676A AUTOMOTIVE GRADE AUIRF1324WL HEXFET Power MOSFET Features l Advanced Process Technology D V(BR)DSS 24V l Ultra Low On-Resistance RDS(on) typ. 1.16m l 50% Lower Lead Resistance max. 1.30m l 175 C Operating Temperature G l Fast Switching ID (Silicon Limited) 382A l Repetitive Avalanche Allowed up to Tjmax S ID (Package Limited) 240A l Lead-Free,

 9.13. Size:147K  international rectifier
 2n6756 irf130.pdf 

PD - 90333F IRF130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6756 HEXFET TRANSISTORS JANTXV2N6756 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/542] 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF130 100V 0.18 14A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique process

 9.14. Size:521K  international rectifier
 irf1324lpbf irf1324spbf.pdf 

PD - 97353A IRF1324SPbF IRF1324LPbF HEXFET Power MOSFET Applications D VDSS 24V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 1.3m l Uninterruptible Power Supply l High Speed Power Switching max. 1.65m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 340A ID (Package Limited) 195A S Benefits l Improved Gate, Avalanche and Dynami

 9.15. Size:278K  international rectifier
 irf1312pbf.pdf 

PD- 95409A IRF1312PbF IRF1312SPbF IRF1312LPbF HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS RDS(on) max ID l Motor Control 80V 10m 95A l Uninterrutible Power Supplies l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See TO-220AB D2Pak TO-26

 9.16. Size:432K  international rectifier
 auirf1324.pdf 

PD - 97482 AUTOMOTIVE GRADE AUIRF1324 HEXFET Power MOSFET Features D VDSS 24V Advanced Process Technology Ultra Low On-Resistance RDS(on) typ. 1.2m 175 C Operating Temperature max. 1.5m Fast Switching G Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 353A Lead-Free, RoHS Compliant S ID (Package Limited) 195A Automotive Qualified * Description Spe

 9.17. Size:232K  international rectifier
 irf1302s.pdf 

PD - 94520 AUTOMOTIVE MOSFET IRF1302S IRF1302L Benefits Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D Dynamic dv/dt Rating VDSS = 20V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 4.0m G ID = 174A S Description Specifically designed for Automotive applications, this St

 9.18. Size:461K  infineon
 auirf1324s auirf1324l.pdf 

AUIRF1324S AUTOMOTIVE GRADE AUIRF1324L HEXFET Power MOSFET Features VDSS 24V Advanced Process Technology RDS(on) typ. 1.3m Ultra Low On-Resistance max. 1.65m Dynamic dV/dT Rating 175 C Operating Temperature ID (Silicon Limited) 340A Fast Switching ID (Package Limited) 195A Repetitive Avalanche Allowed up to Tjmax Lead-

 9.19. Size:655K  infineon
 auirf1324s-7p.pdf 

AUTOMOTIVE GRADE AUIRF1324S-7P Features VDSS 24V Advanced Process Technology RDS(on) typ. 0.8m Ultra Low On-Resistance max. 175 C Operating Temperature 1.0m Fast Switching ID (Silicon Limited) 429A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 240A Lead-Free, RoHS Compliant Automotive Qualified * Description

 9.20. Size:47K  harris semi
 irf131 irf132 irf133.pdf 

IRF130, IRF131, S E M I C O N D U C T O R IRF132, IRF133 12A and 14A, 80V and 100V, 0.16 and 0.23 Ohm, October 1997 N-Channel Power MOSFETs Features Description 12A and 14A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power rDS(ON) = 0.16 and 0.23 MOSFETs designed, tested, and guaranteed to withstand a

 9.21. Size:24K  semelab
 irf130smd05.pdf 

IRF130SMD05N IRFN130SMD05 MECHANICAL DATA Dimensions in mm (inches) N CHANNEL POWER MOSFET FOR HI REL APPLICATIONS ! VDSS 100V ID(cont) 11A RDS(on) 0.19 FEATURES HERMETICALLY SEALED

 9.22. Size:23K  semelab
 irf130smd05dsg.pdf 

IRF130SMD05DSGN MECHANICAL DATA Dimensions in mm (inches) N CHANNEL POWER MOSFET 7.54 (0.296) FOR HI REL 0.76 (0.030) min. 3.175 (0.125) 2.41 (0.095) 2.41 (0.095) Max. APPLICATIONS 0.127 (0.005) 1 3 VDSS 100V ID(cont) 11A 2 RDS(on) 0.19 FEATURES 0.127 (0.005) 16 PLCS 0.127 (0.005) 0.50(0.020) HERMETICALLY SEALED 0.50 (0.020) max. 7.26 (0.286)

 9.23. Size:22K  semelab
 irf130smd.pdf 

 9.24. Size:314K  nell
 irf13n50.pdf 

RoHS IRF13N50 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (14A, 500Volts) DESCRIPTION The Nell IRF13N50 are N-channel enhancement mode D silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation. They are designed as an extremely efficient and reliab

 9.25. Size:1322K  cn sps
 smirf13n50.pdf 

SMIRF13N50 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 13A SMIRF13N50 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 500V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.48 (VGS=10V, ID=6.5A) on-state resistance, provide superi

 9.26. Size:256K  inchange semiconductor
 irf1310nl.pdf 

Isc N-Channel MOSFET Transistor IRF1310NL FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 10

 9.27. Size:258K  inchange semiconductor
 irf1310ns.pdf 

Isc N-Channel MOSFET Transistor IRF1310NS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol

 9.28. Size:245K  inchange semiconductor
 irf1310n.pdf 

isc N-Channel MOSFET Transistor IRF1310N IIRF1310N FEATURES Static drain-source on-resistance RDS(on) 0.036 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 9.29. Size:246K  inchange semiconductor
 irf1324.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1324 IIRF1324 FEATURES Static drain-source on-resistance RDS(on) 1.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM