IXFP36N20X3M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IXFP36N20X3M
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 36 W
   Voltaje máximo drenador - fuente |Vds|: 200 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 36 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
   Carga de la puerta (Qg): 21 nC
   Tiempo de subida (tr): 30 nS
   Conductancia de drenaje-sustrato (Cd): 280 pF
   Resistencia entre drenaje y fuente RDS(on): 0.045 Ohm
   Paquete / Cubierta: TO-220F

Búsqueda de reemplazo de MOSFET IXFP36N20X3M

IXFP36N20X3M Datasheet (PDF)

..1. Size:184K ixys
ixfp36n20x3m.pdf

Preliminary Technical InformationX3-Class HiPerFETTM VDSS = 200VIXFP36N20X3MPower MOSFET ID25 = 36A RDS(on) 45m (Electrically Isolated Tab)OVERMOLDEDTO-220N-Channel Enhancement ModeSymbol Test Conditions Maximum RatingsGIsolated TabDVDSS TJ = 25C to 150C 200 V SVDGR TJ = 25C to 150C, RGS = 1M 200 VG = Gate D =

..2. Size:254K inchange semiconductor
ixfp36n20x3m.pdf

isc N-Channel MOSFET Transistor IXFP36N20X3MFEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

3.1. Size:310K ixys
ixfy36n20x3 ixfa36n20x3 ixfp36n20x3.pdf

VDSS = 200VX3-Class HiPERFETTM IXFY36N20X3ID25 = 36APower MOSFETIXFA36N20X3 RDS(on) 45m IXFP36N20X3N-Channel Enhancement ModeTO-252 (IXFY)G SD (Tab)TO-263 (IXFA)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 200 VGSVDGR TJ = 25C to 150C, RGS = 1M 200 VD (Tab)VGSS Continuous 20 VTO-220

7.1. Size:155K ixys
ixfa36n30p3 ixfp36n30p3.pdf

Preliminary Technical InformationPolar3 TM HiPerFETTM VDSS = 300VIXFA36N30P3Power MOSFET ID25 = 36AIXFP36N30P3 RDS(on) 110m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierTO-263AA (IXFA)GSSymbol Test Conditions Maximum RatingsD (Tab)VDSS TJ = 25C to 150C 300 VTO-220AB (IXFP)VDGR TJ = 25C to 150

9.1. Size:138K ixys
ixfp34n65x2m.pdf

Preliminary Technical InformationX2-Class HiperFETTM VDSS = 650VIXFP34N65X2MPower MOSFET ID25 = 34A RDS(on) 100m (Electrically Isolated Tab)N-Channel Enhancement Mode OVERMOLDEDTO-220Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 650 VGIsolated TabDVDGR TJ = 25C to 150C, RGS = 1M 650 VSVGSS Contin

9.2. Size:565K ixys
ixfa3n120 ixfp3n120.pdf

IXFA 3N120 VDSS =1200 VHiPerFETTMIXFP 3N120 ID25 = 3 APower MOSFETsRDS(on) = 4.5 trr 300 ns N-Channel Enhancement ModeAvalanche Rated, Low Qg, High dv/dtPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-220 (IXFP)VDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C; RGS = 1 M 1200 VD (TAB)VGS Conti

9.3. Size:282K ixys
ixfp34n65x2 ixfh34n65x2.pdf

X2-Class HiPerFETTM VDSS = 650VIXFP34N65X2Power MOSFET ID25 = 34AIXFH34N65X2 RDS(on) 100m N-Channel Enhancement ModeAvalanche RatedTO-220(IXFP)Symbol Test Conditions Maximum RatingsGDVDSS TJ = 25C to 150C 650 VSD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 650 VTO-247VGSS Continuous 30 V(IXFH)VGSM Transien

9.4. Size:206K ixys
ixfa30n60x ixfp30n60x.pdf

Advance Technical InformationX-Class HiPerFETTM VDSS = 600VIXFA30N60XPower MOSFET ID25 = 30AIXFP30N60X RDS(on) 155m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXFA)Fast Intrinsic DiodeGSD (Tab)Symbol Test Conditions Maximum RatingsTO-220 (IXFP)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C, RGS = 1M

9.5. Size:107K ixys
ixfp3n50pm.pdf

Preliminary Technical InformationVDSS = 500 VIXFP 3N50PMPolarHVTM HiPerFETID25 = 2.7 APower MOSFET RDS(on) 2.0 (Electrically Isolated Tab)trr 200 nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsOVERMOLDED TO-220(IXTP...M) OUTLINEVDSS TJ = 25 C t

9.6. Size:205K ixys
ixfa34n65x2 ixfp34n65x2 ixfh34n65x2.pdf

X2-Class HiPerFETTM VDSS = 650VIXFA34N65X2Power MOSFET ID25 = 34AIXFP34N65X2 RDS(on) 100m IXFH34N65X2N-Channel Enhancement ModeTO-263 AA (IXFA)Avalanche RatedFast Intrinsic DiodeGSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXFP)VDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VVGS

9.7. Size:205K inchange semiconductor
ixfp34n65x2.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IXFP34N65X2FEATURESWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSSV Ga

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