IXFP36N20X3M - описание и поиск аналогов

 ..1. Size:184K  ixys
 ixfp36n20x3m.pdf 

Preliminary Technical Information X3-Class HiPerFETTM VDSS = 200V IXFP36N20X3M Power MOSFET ID25 = 36A RDS(on) 45m (Electrically Isolated Tab) OVERMOLDED TO-220 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings G Isolated Tab D VDSS TJ = 25 C to 150 C 200 V S VDGR TJ = 25 C to 150 C, RGS = 1M 200 V G = Gate D =

 ..2. Size:254K  inchange semiconductor
 ixfp36n20x3m.pdf 

isc N-Channel MOSFET Transistor IXFP36N20X3M FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

 3.1. Size:310K  ixys
 ixfy36n20x3 ixfa36n20x3 ixfp36n20x3.pdf 

VDSS = 200V X3-Class HiPERFETTM IXFY36N20X3 ID25 = 36A Power MOSFET IXFA36N20X3 RDS(on) 45m IXFP36N20X3 N-Channel Enhancement Mode TO-252 (IXFY) G S D (Tab) TO-263 (IXFA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 200 V G S VDGR TJ = 25 C to 150 C, RGS = 1M 200 V D (Tab) VGSS Continuous 20 V TO-220

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 ixfa36n30p3 ixfp36n30p3.pdf 

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 ixfp34n65x2m.pdf 

Preliminary Technical Information X2-Class HiperFETTM VDSS = 650V IXFP34N65X2M Power MOSFET ID25 = 34A RDS(on) 100m (Electrically Isolated Tab) N-Channel Enhancement Mode OVERMOLDED TO-220 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 650 V G Isolated Tab D VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S VGSS Contin

 9.2. Size:565K  ixys
 ixfa3n120 ixfp3n120.pdf 

IXFA 3N120 VDSS =1200 V HiPerFETTM IXFP 3N120 ID25 = 3 A Power MOSFETs RDS(on) = 4.5 trr 300 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-220 (IXFP) VDSS TJ = 25 C to 150 C 1200 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1200 V D (TAB) VGS Conti

 9.3. Size:282K  ixys
 ixfp34n65x2 ixfh34n65x2.pdf 

X2-Class HiPerFETTM VDSS = 650V IXFP34N65X2 Power MOSFET ID25 = 34A IXFH34N65X2 RDS(on) 100m N-Channel Enhancement Mode Avalanche Rated TO-220 (IXFP) Symbol Test Conditions Maximum Ratings G D VDSS TJ = 25 C to 150 C 650 V S D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 650 V TO-247 VGSS Continuous 30 V (IXFH) VGSM Transien

 9.4. Size:206K  ixys
 ixfa30n60x ixfp30n60x.pdf 

Advance Technical Information X-Class HiPerFETTM VDSS = 600V IXFA30N60X Power MOSFET ID25 = 30A IXFP30N60X RDS(on) 155m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXFA) Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXFP) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C, RGS = 1M

 9.5. Size:107K  ixys
 ixfp3n50pm.pdf 

Preliminary Technical Information VDSS = 500 V IXFP 3N50PM PolarHVTM HiPerFET ID25 = 2.7 A Power MOSFET RDS(on) 2.0 (Electrically Isolated Tab) trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings OVERMOLDED TO-220 (IXTP...M) OUTLINE VDSS TJ = 25 C t

 9.6. Size:205K  ixys
 ixfa34n65x2 ixfp34n65x2 ixfh34n65x2.pdf 

X2-Class HiPerFETTM VDSS = 650V IXFA34N65X2 Power MOSFET ID25 = 34A IXFP34N65X2 RDS(on) 100m IXFH34N65X2 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGS

 9.7. Size:205K  inchange semiconductor
 ixfp34n65x2.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXFP34N65X2 FEATURES With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS V Ga