MTD300N20J3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MTD300N20J3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 50 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 8.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7.8 nS
Cossⓘ - Capacitancia de salida: 46 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de MTD300N20J3 MOSFET
MTD300N20J3 Datasheet (PDF)
mtd300n20j3.pdf

Spec. No. : C875J3 Issued Date : 2016.01.13 CYStech Electronics Corp. Revised Date : 2016.07.06 Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 200V MTD300N20J3 ID@VGS=10V, TC=25C 8.3A RDS(ON)@VGS=10V, ID=3A 302m(typ) RDS(ON)@VGS=4.5V, ID=2A 303m(typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-
mtd300n20j3.pdf

Isc N-Channel MOSFET Transistor MTD300N20J3FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo
mtd3055vrev2a.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD3055V/DDesigner's Data SheetMTD3055VTMOS VMotorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 12 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.15 OHMtance area product about one
mtd3055vl.pdf

MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTD3055VL/DDesigner's Data SheetMTD3055VLTMOS VMotorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountTMOS POWER FET NChannel EnhancementMode Silicon Gate 12 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.18 OHMtance area product about o
Otros transistores... IXFP36N20X3M , IXFP72N20X3M , IXFQ8N85X , IXFY36N20X3 , IXTA12N70X2 , IXTP230N04T4M , MFT60N12T22FS , MMD60R580QRH , CS150N03A8 , NTHL040N65S3F , NVD4C05NT4G , IXTH12N70X2 , PSMN3R7-100BSE , R6018JNX , SIHG47N60AEF , STD140N6F7 , STH140N6F7 .
History: 2SJ544
History: 2SJ544



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMSL0406AKQ | JMSL0406AK | JMSL0406AGQ | JMSL0406AGDQ | JMSL0406AGD | JMSL04060GDQ | JMSL04055UQ | JMSL04055GQ | JMSL0403PU | JMSL0403PK | JMSL0403PGQ | JMSL0403PG | JMSL0403AU | JMSL0403AGQ | JMSL0403AG | JMTQ90N02A
Popular searches
irf840 datasheet | ge10001 | irf830 | irfp450 | mj21193 | s9014 transistor | bc547 transistor datasheet | c945 datasheet