MTD300N20J3 Todos los transistores

 

MTD300N20J3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTD300N20J3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 50 W

Tensión drenaje-fuente (Vds): 200 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 8.3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.5 V

Resistencia drenaje-fuente RDS(on): 0.38 Ohm

Empaquetado / Estuche: TO-252

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MTD300N20J3 Datasheet (PDF)

1.1. mtd300n20j3.pdf Size:261K _inchange_semiconductor

MTD300N20J3
MTD300N20J3

Isc N-Channel MOSFET Transistor MTD300N20J3 ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo

5.1. mtd3055vl.pdf Size:184K _motorola

MTD300N20J3
MTD300N20J3

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD3055VL/D Designer's? Data Sheet MTD3055VL TMOS V Motorola Preferred Device Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET NChannel EnhancementMode Silicon Gate 12 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an onresis- RDS(on) = 0.18 OHM tance area product about onehalf tha

5.2. mtd3055vlrev2a.pdf Size:209K _motorola

MTD300N20J3
MTD300N20J3

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD3055VL/D Designer's? Data Sheet MTD3055VL TMOS V Motorola Preferred Device Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET NChannel EnhancementMode Silicon Gate 12 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an onresis- RDS(on) = 0.18 OHM tance area product about onehalf tha

 5.3. mtd3055v.pdf Size:180K _motorola

MTD300N20J3
MTD300N20J3

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD3055V/D Designer's? Data Sheet MTD3055V TMOS V Motorola Preferred Device Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET NChannel EnhancementMode Silicon Gate 12 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an onresis- RDS(on) = 0.15 OHM tance area product about onehalf that of

5.4. mtd3055vrev2a.pdf Size:206K _motorola

MTD300N20J3
MTD300N20J3

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD3055V/D Designer's? Data Sheet MTD3055V TMOS V Motorola Preferred Device Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET NChannel EnhancementMode Silicon Gate 12 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an onresis- RDS(on) = 0.15 OHM tance area product about onehalf that of

 5.5. mtd3055vl.pdf Size:179K _fairchild_semi

MTD300N20J3
MTD300N20J3

August 1999 DISTRIBUTION GROUP* MTD3055VL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features DS(ON) Ω GS

5.6. mtd3055v.pdf Size:238K _fairchild_semi

MTD300N20J3
MTD300N20J3

August 1999 MTD3055V* N-Channel Enhancement Mode Field Effect Transistor General Description Features • 12 A, 60 V. RDS(ON) = 0.15 Ω @ VGS = 10 V This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters • Low gate charge. using either synchronous or conventional switching PWM controllers. • Fast switching speed. These MOSFETs

5.7. mtd30n10q8.pdf Size:341K _cystek

MTD300N20J3
MTD300N20J3

Spec. No. : C887Q8 Issued Date : 2012.11.30 CYStech Electronics Corp. Revised Date : 2013.03.01 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 100V MTD30N10Q8 ID 6A RDSON@VGS=10V, ID=6A 33mΩ(typ) RDSON@VGS=4.5V, ID=5A 35mΩ(typ) Description The MTD30N10Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switch

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