STD140N6F7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: STD140N6F7
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 134 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 68 nS
   Cossⓘ - Capacitancia de salida: 1520 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0038 Ohm
   Paquete / Cubierta: TO-252

Búsqueda de reemplazo de MOSFET STD140N6F7

STD140N6F7 Datasheet (PDF)

..1. Size:551K st
std140n6f7.pdf

STD140N6F7DatasheetN-channel 60 V, 3.1 m typ., 80 A STripFET F7 Power MOSFET in a DPAK packageFeaturesVDS RDS(on) max. ID PTOTOrder codeTABSTD140N6F7 60 V 3.8 m 80 A 134 W321 Among the lowest RDS(on) on the marketDPAK Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunityD(2, TAB) High avalanche ruggednessApplications Switc

..2. Size:262K inchange semiconductor
std140n6f7.pdf

Isc N-Channel MOSFET Transistor STD140N6F7FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

8.1. Size:457K auk
std1408pi.pdf

STD1408PI NPN Silicon Transistor Features Low saturation switching application Power amplifier Collector High Voltage : V =80V Min. CEO2 Complement to STB1017PI BaseBase11EmitterOrdering Information 31 2 3 Part Number Marking Package TO-220F-3L STD1408PI STD1408 TO-220F-3L Marking Information Column 1 = Manufacturer Logo Column 2 =

9.1. Size:1281K st
stb14nm50n std14nm50n stp14nm50n stf14nm50n.pdf

STB14NM50N, STD14NM50NSTF14NM50N, STP14NM50NN-channel 500 V, 0.28 , 12 A MDmesh II Power MOSFETin DPAK, D2PAK, TO-220 and TO-220FPFeaturesVDSS @ RDS(on) Type ID3TJmax max13STB14NM50N2DPAK1STD14NM50N550 V

9.2. Size:1066K st
stb14nm50n std14nm50n stf14nm50n stp14nm50n.pdf

STB14NM50N, STD14NM50NSTF14NM50N, STP14NM50NN-channel 500 V, 0.28 , 12 A MDmeshTM II Power MOSFETin DPAK, D2PAK, TO-220 and TO-220FPFeaturesVDSS @ RDS(on) Type ID3TJmax max13STB14NM50N2DPAK1STD14NM50N550 V

9.3. Size:262K inchange semiconductor
std14nm50n.pdf

Isc N-Channel MOSFET Transistor STD14NM50NFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: STD3NK50ZT4

Liste

Recientemente añadidas las descripciónes de los transistores: