STD140N6F7 MOSFET. Datasheet pdf. Equivalent
Type Designator: STD140N6F7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 134 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 80 A
Maximum Junction Temperature (Tj): 175 °C
Maximum Drain-Source On-State Resistance (Rds): 0.0038 Ohm
Package: TO-252
STD140N6F7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STD140N6F7 Datasheet (PDF)
1.1. std140n6f7.pdf 
Size:262K _inchange_semiconductor
Isc N-Channel MOSFET Transistor STD140N6F7 ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol
4.1. std1408pi.pdf Size:329K _auk
STD1408PI NPN Silicon Transistor Features PIN Connection • Low saturation switching application • Power amplifier • High Voltage : VCEO=80V Min. • Complement to STB1017PI 1 2 3 TO-220F-3L Ordering Information Type NO. Marking Package Code STD1408PI STD1408 TO-220F-3L Marking Diagram Column 1 : Manufacturer AUK Column 2 : Production Information AUK AUK
5.1. stb14nm50n std14nm50n stf14nm50n stp14nm50n.pdf Size:1066K _st
STB14NM50N, STD14NM50N STF14NM50N, STP14NM50N N-channel 500 V, 0.28 ?, 12 A MDmeshTM II Power MOSFET in DPAK, D2PAK, TO-220 and TO-220FP Features VDSS @ RDS(on) Type ID 3 TJmax max 1 3 STB14NM50N 2 DPAK 1 STD14NM50N 550 V < 0.32 ? 12 A TO-220 STF14NM50N STP14NM50N 100% avalanche tested 3 3 Low input capacitance and gate charge 1 2 1 Low gate input resistance D2PA
5.2. stb14nm50n std14nm50n stp14nm50n stf14nm50n.pdf Size:1281K _st
STB14NM50N, STD14NM50N STF14NM50N, STP14NM50N N-channel 500 V, 0.28 ?, 12 A MDmesh II Power MOSFET in DPAK, D2PAK, TO-220 and TO-220FP Features VDSS @ RDS(on) Type ID 3 TJmax max 1 3 STB14NM50N 2 DPAK 1 STD14NM50N 550 V < 0.32 ? 12 A TO-220 STF14NM50N STP14NM50N 100% avalanche tested 3 3 Low input capacitance and gate charge 1 2 1 Low gate input resistance D2PAK
5.3. std14nm50n.pdf Size:262K _inchange_semiconductor
Isc N-Channel MOSFET Transistor STD14NM50N ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
