STP140N6F7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: STP140N6F7
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 158 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 68 nS
   Cossⓘ - Capacitancia de salida: 1520 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm
   Paquete / Cubierta: TO-220

Búsqueda de reemplazo de MOSFET STP140N6F7

STP140N6F7 Datasheet (PDF)

..1. Size:256K st
stp140n6f7.pdf

STP140N6F7 N-channel 60 V, 0.0031 typ., 80 A STripFET F7 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTP140N6F7 60 V 0.0035 80 A 158 W Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications

0.1. Size:260K inchange semiconductor
istp140n6f7.pdf

isc N-Channel MOSFET Transistor ISTP140N6F7FEATURESWith TO-220 packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

7.1. Size:539K st
stb140nf75-1 stb140nf75t4 stb140nf75 stp140nf75-1 stp140nf75.pdf

STP140NF75STB140NF75 - STB140NF75-1N-channel 75V - 0.0065 - 120A - D2PAK/I2/TO-220STripFET III Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB140NF75 75V

7.2. Size:582K st
stp140n8f7.pdf

STP140N8F7 N-channel 80 V, 3.5 m typ., 90 A STripFET F7 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTP140N8F7 80 V 4.3 m 90 A 200 W Among the lowest R on the market DS(on) Excellent figure of merit (FoM) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness Applications

7.3. Size:481K st
stb140nf55 stb140nf55-1 stp140nf55.pdf

STB140NF55 - STB140NF55-1STP140NF55N-channel 55V - 0.0065 - 80A - D2PAK - I2PAK - TO-220STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) ID (1)STB140NF55 55V

7.4. Size:517K st
stp140nf75.pdf

STP140NF75STB140NF75 - STB140NF75-1N-channel 75V - 0.0065 - 120A - D2PAK/I2/TO-220STripFET III Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB140NF75 75V

7.5. Size:262K inchange semiconductor
stp140nf75.pdf

isc N-Channel MOSFET Transistor STP140NF75FEATURESDrain Current : I =120A@ T =25D CDrain Source Voltage: V =75V(Min)DSSStatic Drain-Source On-Resistance: R =7.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSmotor drive, DC-DC converter, power switchand solenoid drive.A

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: FDS3590

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