STP140N6F7 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STP140N6F7  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 158 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 68 nS

Cossⓘ - Capacitancia de salida: 1520 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm

Encapsulados: TO-220

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STP140N6F7 datasheet

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 stp140n6f7.pdf pdf_icon

STP140N6F7

STP140N6F7 N-channel 60 V, 0.0031 typ., 80 A STripFET F7 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STP140N6F7 60 V 0.0035 80 A 158 W Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications

 0.1. Size:260K  inchange semiconductor
 istp140n6f7.pdf pdf_icon

STP140N6F7

isc N-Channel MOSFET Transistor ISTP140N6F7 FEATURES With TO-220 packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

 7.1. Size:539K  st
 stb140nf75-1 stb140nf75t4 stb140nf75 stp140nf75-1 stp140nf75.pdf pdf_icon

STP140N6F7

STP140NF75 STB140NF75 - STB140NF75-1 N-channel 75V - 0.0065 - 120A - D2PAK/I2/TO-220 STripFET III Power MOSFET General features Type VDSS RDS(on) ID STB140NF75 75V

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 stp140n8f7.pdf pdf_icon

STP140N6F7

STP140N8F7 N-channel 80 V, 3.5 m typ., 90 A STripFET F7 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STP140N8F7 80 V 4.3 m 90 A 200 W Among the lowest R on the market DS(on) Excellent figure of merit (FoM) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness Applications

MOSTRAR MÁS

Otros transistores... NTHL040N65S3F, NVD4C05NT4G, IXTH12N70X2, PSMN3R7-100BSE, R6018JNX, SIHG47N60AEF, STD140N6F7, STH140N6F7, IRFZ46N, SUP70060E, TK13A60W, VN1206N5, VN1210N2, WFD5N65L, CJ1012, CJ1012-G, CJ2101