TK13A60W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TK13A60W
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 50 W
Tensión drenaje-fuente (Vds): 600 V
Tensión compuerta-fuente (Vgs): 30 V
Corriente continua de drenaje (Id): 13 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 4 V
Resistencia drenaje-fuente RDS(on): 0.43 Ohm
Empaquetado / Estuche: TO-220F
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TK13A60W Datasheet (PDF)
1.1. tk13a60w.pdf 
Size:255K _inchange_semiconductor
isc N-Channel MOSFET Transistor TK13A60W ·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PA
3.1. tk13a60d en datasheet 100812.pdf Size:191K _toshiba2
TK13A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOS VII) TK13A60D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.33 ? (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.) Low leakage current: IDSS = 10 ?A (max) (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum
4.1. tk13a65u en datasheet 100823.pdf Size:191K _toshiba2
TK13A65U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK13A65U Switching Regulator Applications Unit: mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON resistance: RDS (ON) = 0.32 ? (typ.) High forward transfer admittance: ?Yfs? = 8.0 S (typ.) Low leakage current: IDSS = 100 ?A (max) (VDS = 650 V) Enhancement-mode: Vth = 3.0 to 5.0 V
4.2. tk13a65d en datasheet 110430.pdf Size:226K _toshiba2
TK13A65D MOSFETs Silicon N-Channel MOS (?-MOS?) TK13A65D TK13A65D TK13A65D TK13A65D 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.4 ? (typ.) (2) High forward transfer admittance: |Yfs| = 7.5 S (typ.) (3) Low leakage current: IDSS = 10 A
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
