VN1206N5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VN1206N5
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 45 W
Tensión drenaje-fuente (Vds): 60 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 9 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 2.4 V
Resistencia drenaje-fuente RDS(on): 0.45 Ohm
Empaquetado / Estuche: TO-220
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VN1206N5 Datasheet (PDF)
1.1. vn1206n5.pdf 
Size:259K _inchange_semiconductor
isc N-Channel MOSFET Transistor VN1206N5 ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PAR
4.1. vn1206.pdf Size:544K _update_mosfet
Supertex inc. VN1206 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, ► Low power drive requirement silicon-gate manufacturing process. This combination ► Ease of paralleling produces a device with the power h
4.2. vn1206.pdf Size:355K _supertex
VN1206 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This enhancement-mode (normally-off) transistor utilizes > Free from secondary breakdown a vertical DMOS structure and Supertexs well-proven, > Low power drive requirement silicon-gate manufacturing process. This combination > Ease of paralleling produces a device with the power handling capabilities >
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