VN1206N5 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VN1206N5
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 45 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 9 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 300 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de MOSFET VN1206N5
Principales características: VN1206N5
vn1206n5.pdf
isc N-Channel MOSFET Transistor VN1206N5 FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR
vn1206.pdf
Supertex inc. VN1206 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex s well-proven, Low power drive requirement silicon-gate manufacturing process. This combination Ease of paralleling produces a device with the power h
7mbr75vn120-50.pdf
7MBR75VN120-50 IGBT Modules IGBT MODULE (V series) 1200V / 75A / PIM Features Low V (sat) CE Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25 C unless o
Otros transistores... PSMN3R7-100BSE , R6018JNX , SIHG47N60AEF , STD140N6F7 , STH140N6F7 , STP140N6F7 , SUP70060E , TK13A60W , 7N60 , VN1210N2 , WFD5N65L , CJ1012 , CJ1012-G , CJ2101 , CJ2102 , CJ2301 , CJ2301-HF .
History: AP02N90H | PSMN3R3-40MSH
History: AP02N90H | PSMN3R3-40MSH
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AP30H150K | AP30H150G | AP3065SD | AP3004S | AP3003 | AP3002S | AP2N65K | AP2716SD | AP2716QD | AP2716KD | AP2714SD | AP2714QD | AP25P30Q | AP25P06Q | AP25P06K | AP25N06Q
Popular searches
50n06 | mje350 | 2n3866 | irf 3205 | 2n5088 equivalent | d882 transistor | 2n3771 | s9018

