VN1206N5 Spec and Replacement
Type Designator: VN1206N5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 300 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO-220
VN1206N5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VN1206N5 Specs
vn1206n5.pdf
isc N-Channel MOSFET Transistor VN1206N5 FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR... See More ⇒
vn1206.pdf
Supertex inc. VN1206 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex s well-proven, Low power drive requirement silicon-gate manufacturing process. This combination Ease of paralleling produces a device with the power h... See More ⇒
7mbr75vn120-50.pdf
7MBR75VN120-50 IGBT Modules IGBT MODULE (V series) 1200V / 75A / PIM Features Low V (sat) CE Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25 C unless o... See More ⇒
Detailed specifications: PSMN3R7-100BSE , R6018JNX , SIHG47N60AEF , STD140N6F7 , STH140N6F7 , STP140N6F7 , SUP70060E , TK13A60W , 7N60 , VN1210N2 , WFD5N65L , CJ1012 , CJ1012-G , CJ2101 , CJ2102 , CJ2301 , CJ2301-HF .
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