VN1206N5 MOSFET. Datasheet pdf. Equivalent
Type Designator: VN1206N5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 45 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.4 V
Maximum Drain Current |Id|: 9 A
Maximum Junction Temperature (Tj): 175 °C
Maximum Drain-Source On-State Resistance (Rds): 0.45 Ohm
Package: TO-220
VN1206N5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VN1206N5 Datasheet (PDF)
1.1. vn1206n5.pdf 
Size:259K _inchange_semiconductor
isc N-Channel MOSFET Transistor VN1206N5 ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PAR
4.1. vn1206.pdf Size:544K _update_mosfet
Supertex inc. VN1206 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, ► Low power drive requirement silicon-gate manufacturing process. This combination ► Ease of paralleling produces a device with the power h
4.2. vn1206.pdf Size:355K _supertex
VN1206 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This enhancement-mode (normally-off) transistor utilizes > Free from secondary breakdown a vertical DMOS structure and Supertexs well-proven, > Low power drive requirement silicon-gate manufacturing process. This combination > Ease of paralleling produces a device with the power handling capabilities >
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