All MOSFET. VN1206N5 Datasheet

 

VN1206N5 MOSFET. Datasheet pdf. Equivalent


   Type Designator: VN1206N5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO-220

 VN1206N5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VN1206N5 Datasheet (PDF)

 ..1. Size:259K  inchange semiconductor
 vn1206n5.pdf

VN1206N5 VN1206N5

isc N-Channel MOSFET Transistor VN1206N5FEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

 7.1. Size:145K  supertex
 vn1206n1-n2-n5 vn1204n1-n2-n5 vn1210n1-n2-n5.pdf

VN1206N5 VN1206N5

 8.1. Size:544K  supertex
 vn1206.pdf

VN1206N5 VN1206N5

Supertex inc. VN1206N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, Low power drive requirementsilicon-gate manufacturing process. This combination Ease of parallelingproduces a device with the power h

 9.1. Size:756K  fuji
 7mbr75vn120-50.pdf

VN1206N5 VN1206N5

7MBR75VN120-50 IGBT ModulesIGBT MODULE (V series)1200V / 75A / PIMFeaturesLow V (sat)CECompact PackageP.C.Board Mount ModuleConverter Diode Bridge Dynamic Brake CircuitRoHS compliant productApplicationsInverter for Motor DriveAC and DC Servo Drive AmplifierUninterruptible Power SupplyMaximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25C unless o

 9.2. Size:426K  fuji
 7mbr50vn120-50.pdf

VN1206N5 VN1206N5

http://www.fujielectric.com/products/semiconductor/7MBR50VN120-50 IGBT ModulesIGBT MODULE (V series)1200V / 50A / PIMFeaturesLow V (sat)CECompact PackageP.C.Board Mount ModuleConverter Diode Bridge Dynamic Brake CircuitRoHS compliant productApplicationsInverter for Motor DriveAC and DC Servo Drive AmplifierUninterruptible Power SupplyMaximum Ratings and Characteris

 9.3. Size:768K  fuji
 7mbr150vn120-50.pdf

VN1206N5 VN1206N5

7MBR150VN120-50 IGBT ModulesIGBT MODULE (V series)1200V / 150A / PIMFeaturesLow V (sat)CECompact PackageP.C.Board Mount ModuleConverter Diode Bridge Dynamic Brake CircuitRoHS compliant productApplicationsInverter for Motor DriveAC and DC Servo Drive AmplifierUninterruptible Power SupplyMaximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25C unless

 9.4. Size:748K  fuji
 7mbr100vn120-50.pdf

VN1206N5 VN1206N5

7MBR100VN120-50 IGBT ModulesIGBT MODULE (V series)1200V / 100A / PIMFeaturesLow V (sat)CECompact PackageP.C.Board Mount ModuleConverter Diode Bridge Dynamic Brake CircuitRoHS compliant productApplicationsInverter for Motor DriveAC and DC Servo Drive AmplifierUninterruptible Power SupplyMaximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25C unless

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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