CJ2301S Todos los transistores

 ..1. Size:1302K  jiangsu
 cj2301s.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2301S P-Channel 20-V(D-S) MOSFET ID V(BR)DSS RDS(on)MAX SOT-23 112m @-4.5V -20V -2.3A 142m @-2.5V 1. GATE 2. SOURCE 3. DRAIN APPLICATION FEATURE z Load Switch for Portable Devices TrenchFET Power MOSFET z DC/DC Converter MARKING Equivalent Circuit Maximum ratings (Ta

 8.1. Size:464K  jiangsu
 cj2301.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2301 P-Channel 20-V(D-S) MOSFET SOT-23 FEATURE 1. GATE TrenchFET Power MOSFET 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING S1 Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -20

 8.2. Size:117K  comchip
 cj2301-hf.pdf

MOSFET Comchip S M D D i o d e S p e c i a l i s t CJ2301-HF P-Channel RoHS Device Halogen Free SOT-23 Features - P-Channel 20-V(D-S) MOSFET 0.118(3.00) 0.110(2.80) - Trench FET Power MOSFET. 3 - Load Switch for Portable Devices. 0.055(1.40) - DC/DC Converter. 0.047(1.20) 1 2 Mechanical data 0.079(2.00) 0.071(1.80) - Case SOT-23, molded plastic. - Terminals Solde

 9.1. Size:1210K  jiangsu
 cj2307.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2307 P-Channel 30-V(D-S) MOSFET ID V(BR)DSS RDS(on)MAX SOT-23 88m @-10V -30V -2.7A 1. GATE 138m @-4.5V 2. SOURCE 3. DRAIN FEATURE APPLICATION TrenchFET Power MOSFET Load Switch for Portable Devices MARKING Equivalent Circuit Maximum ratings ( Ta=25 unless othe

 9.2. Size:680K  jiangsu
 cj2306.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS SOT-23 CJ2306 N-Channel 30-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE APPLICATIONS 3. DRAIN Load Switch for Portable Devices DC/DC Converter MARKING S6 Maximum ratings (at TA=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source voltage VD

 9.3. Size:231K  jiangsu
 cj2302.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2302 N-Channel 20-V(D-S) MOSFET SOT-23 FEATURE 1. GATE TrenchFET Power MOSFET 2. SOURCE 3. DRAIN APPLICATIONS Load Switch for Portable Devices DC/DC Converter MARKING S2 Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS

 9.4. Size:846K  jiangsu
 cj2303.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2303 P-Channel 30-V(D-S) MOSFET ID SOT-23 V(BR)DSS RDS(on)MAX 190m @-10V -30V -1.9A 1. GATE 330m @-4.5V 2. SOURCE 3. DRAIN APPLICATION FEATURE Load Switch for Portable Devices TrenchFET Power MOSFET DC/DC Converter MARKING Equivalent Circuit Maximum ratings (Ta=

 9.5. Size:2634K  jiangsu
 cj2304.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2304 N-Channel MOSFET ID SOT-23 V(BR)DSS RDS(on)MAX 60m @10V 30V 3.3A 1. GATE 75m @4.5V 2. SOURCE 3. DRAIN FEATURE APPLICATION TrenchFET Power MOSFET Load Switch for Portable Devices DC/DC Converter MARKING Equivalent Circuit Maximum ratings (Ta=25 unless other

 9.6. Size:1222K  jiangsu
 cj2305.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2305 P-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-23 45m @-4.5V -12V 60m @-2.5V -4.1A 1. GATE 90m @-1.8V 2. SOURCE 3. DRAIN APPLICATION FEATURE Load Switch for Portable Devices TrenchFET Power MOSFET DC/DC Converter MARKING Equivalent Circuit Maximum ratings

 9.7. Size:1190K  jiangsu
 cj2302s.pdf

 9.8. Size:1722K  cn vbsemi
 cj2306.pdf

CJ2306 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G 1