CJ2301S
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: CJ2301S
Маркировка: S1U
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 0.35
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 2.3
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 5.5
nC
trⓘ -
Время нарастания: 35
ns
Cossⓘ - Выходная емкость: 75
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.112
Ohm
Тип корпуса:
SOT-23
CJ2301S
Datasheet (PDF)
..1. Size:1302K jiangsu
cj2301s.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2301S P-Channel 20-V(D-S) MOSFET ID V(BR)DSS RDS(on)MAX SOT-23 112m@-4.5V-20V-2.3A142m@-2.5V1. GATE 2. SOURCE 3. DRAIN APPLICATION FEATURE z Load Switch for Portable Devices TrenchFET Power MOSFET z DC/DC Converter MARKING Equivalent Circuit Maximum ratings (Ta
8.1. Size:464K jiangsu
cj2301.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2301 P-Channel 20-V(D-S) MOSFET SOT-23 FEATURE 1. GATE TrenchFET Power MOSFET 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S1Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -20
8.2. Size:117K comchip
cj2301-hf.pdf 
MOSFETComchipS M D D i o d e S p e c i a l i s tCJ2301-HFP-ChannelRoHS DeviceHalogen FreeSOT-23Features - P-Channel 20-V(D-S) MOSFET 0.118(3.00)0.110(2.80) - Trench FET Power MOSFET.3 - Load Switch for Portable Devices.0.055(1.40) - DC/DC Converter.0.047(1.20)1 2Mechanical data0.079(2.00)0.071(1.80) - Case: SOT-23, molded plastic. - Terminals: Solde
9.1. Size:1210K jiangsu
cj2307.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2307 P-Channel 30-V(D-S) MOSFET ID V(BR)DSS RDS(on)MAX SOT-23 88m@-10V-30V-2.7A1. GATE 138m@-4.5V 2. SOURCE 3. DRAIN FEATURE APPLICATION TrenchFET Power MOSFET Load Switch for Portable Devices MARKING Equivalent Circuit Maximum ratings ( Ta=25 unless othe
9.2. Size:680K jiangsu
cj2306.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETSSOT-23 CJ2306 N-Channel 30-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE APPLICATIONS 3. DRAIN Load Switch for Portable Devices DC/DC Converter MARKING: S6 Maximum ratings (at TA=25 unless otherwise noted) Parameter Symbol Value UnitDrain-Source voltage VD
9.3. Size:231K jiangsu
cj2302.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2302 N-Channel 20-V(D-S) MOSFET SOT-23 FEATURE 1. GATE TrenchFET Power MOSFET 2. SOURCE 3. DRAIN APPLICATIONS Load Switch for Portable Devices DC/DC Converter MARKING: S2 Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value UnitDrain-Source Voltage VDS
9.4. Size:846K jiangsu
cj2303.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2303 P-Channel 30-V(D-S) MOSFET ID SOT-23 V(BR)DSS RDS(on)MAX 190m@-10V-30V-1.9A1. GATE 330m@-4.5V2. SOURCE 3. DRAIN APPLICATION FEATURE Load Switch for Portable Devices TrenchFET Power MOSFET DC/DC Converter MARKING Equivalent Circuit Maximum ratings (Ta=
9.5. Size:2634K jiangsu
cj2304.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2304 N-Channel MOSFET ID SOT-23 V(BR)DSS RDS(on)MAX 60m@10V30V3.3A1. GATE 75m@4.5V2. SOURCE 3. DRAIN FEATURE APPLICATION TrenchFET Power MOSFET Load Switch for Portable Devices DC/DC Converter MARKING Equivalent Circuit Maximum ratings (Ta=25 unless other
9.6. Size:1222K jiangsu
cj2305.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2305 P-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-23 45m@-4.5V-12V 60m@-2.5V-4.1A1. GATE 90m@-1.8V 2. SOURCE 3. DRAIN APPLICATION FEATURE Load Switch for Portable Devices TrenchFET Power MOSFET DC/DC Converter MARKING Equivalent Circuit Maximum ratings
9.7. Size:1190K jiangsu
cj2302s.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2302S N-Channel 20-V(D-S) MOSFET ID SOT-23 V(BR)DSS RDS(on)MAX 60m@4.5V20V2.1A1. GATE 115m@2.5V2. SOURCE 3. DRAIN FEATURE APPLICATION TrenchFET Power MOSFET Load Switch for Portable Devices DC/DC Converter MARKING Equivalent Circuit Maximum ratings (Ta=25
9.8. Size:1722K cn vbsemi
cj2306.pdf 
CJ2306www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G 1
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