CJP05N60 Todos los transistores

 

CJP05N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CJP05N60
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 120 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 90 nS
   Cossⓘ - Capacitancia de salida: 72 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm
   Paquete / Cubierta: TO-220
 

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CJP05N60 Datasheet (PDF)

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CJP05N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP05N60 N-Channel Power MOSFET TO-220-3LDescription This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, h

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CJP05N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP05N60B N-Channel Power MOSFET TO-220-3L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new 1. GATE high energy device also offers a drain-to-source diode fast 2. DRAIN recovery time. Desighed

Otros transistores... CJP01N65B , CJP02N60 , CJP02N65 , CJP02N80 , CJP04N60 , CJP04N60A , CJP04N65 , CJP04N65A , SKD502T , CJP05N60B , CJP07N60 , CJP07N65 , CJP08N60 , CJP08N65 , CJP10N60 , CJP10N65 , CJP12N60 .

History: CS5M3710 | AP65SL190DP | SM1A27PSU | HSU6040 | PMN25UN | IPD220N06L3G | IPD50N04S4-08

 

 
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